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NOIV1SE025KA-GDC

Onsemi

NOIV1SE025KA-GDC by Onsemi

NOIV1SE025KA-GDC by Onsemi is a CMOS image sensor with 4.50X4.50 um pixel size, 310 MHz master clock, and 56.2 dB dynamic range. Ideal for applications requiring high-resolution imaging at up to 53 fps in an optical format of 1.37 inches.

Median Price

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Lifecycle Status

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Vyrian

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AZTECH Wire

Italy . 1,019 parts In-Stock

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TANS Electronics

Latvia . 3,439 parts In-Stock

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Corphita

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SupplyDigital Components

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Problanco Electronics

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Kulean Microsystems

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UHIMA Technologies

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Corohmni

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Overview

Experience exceptional image quality and performance with the NOIV1SE025KA-GDC by Onsemi. As a leading manufacturer in the industry, Onsemi's image sensors are trusted for their reliability and innovation. Ideal for a wide range of applications, this sensor offers unparalleled value and benefits to customers looking for high-quality imaging solutions. Elevate your projects with the superior technology and advantages that the NOIV1SE025KA-GDC provides, ensuring stunning results every time.

Feature Benefit Bullets

Pixel Size (um): 4.50X4.50

With a small pixel size, this image sensor can capture detailed images with high resolution.

Maximum Supply Voltage: 2 V

Operating at a maximum supply voltage of 2V ensures low power consumption and efficient performance.

Master Clock: 310 MHz

A high master clock frequency of 310 MHz enables fast processing and data transfer rates.

Body Width: 36.1 inch

Compact body width allows for easy integration into various devices and systems.

Power Supplies (V): 3.3

Stable power supply voltage of 3.3V ensures consistent and reliable operation.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensor technology provides high sensitivity and low noise performance for superior image quality.

Package Shape or Style: RECTANGULAR

Rectangular package shape makes it easy to mount and secure in place within a device.

Minimum Supply Voltage: 1.6 V

Operating at a low minimum supply voltage of 1.6V ensures energy efficiency.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85 °C, this sensor can withstand harsh environmental conditions.

Horizontal Pixel: 5120

High horizontal pixel count allows for wide image capture and detailed visualization.

Minimum Operating Temperature: -40 °C

Operating at a minimum temperature of -40 °C ensures functionality in cold environments.

Maximum Operating Current: 380 mA

Efficient power usage with a maximum operating current of 380 mA for extended battery life.

Housing: CERAMIC

Ceramic housing provides durability and protection for the sensor components.

Dynamic Range: 56.2 dB

High dynamic range of 56.2 dB allows for capturing a wide range of light intensities in an image.

Vertical Pixel: 5120

Equal vertical pixel count ensures uniform image resolution and quality.

Body Length/Diameter: 43.1 mm

The compact body length/diameter of 43.1 mm allows for versatile mounting options.

Spectral Response (nm): 400-1000

Wide spectral response range of 400-1000 nm enables capturing images across various wavelengths of light.

Optical Format (inch): 1.37

Optical format of 1.37 inches provides a suitable sensor size for different imaging applications.

Termination Type: SOLDER

Solder termination ensures secure connections for reliable data transfer.

Output Interface Type: 4-WIRE INTERFACE

4-wire interface facilitates easy connectivity with other devices for data exchange.

Frame Rate: 53 fps

High frame rate of 53 fps allows for smooth and real-time image capturing.

Array Type: FRAME

Frame array type provides a structured layout for capturing images with precision.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature offers a secure and stable attachment to a device or system.

Technical Specifications

Image Sensors NOIV1SE025KA-GDC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO HAS ANALOG SUPPLY VOLTAGE 3.0 TO 3.6 V, ALSO ANALOG CURRENT 775 MA, IT HAS OPTICAL FORMAT OF 35 MM, GLOBAL SHUTTER, ROLLING SHUTTER

Array Type:

FRAME

Body Width:

36.1 inch

Body Length/Diameter:

43.1 mm

Dynamic Range:

56.2 dB

Frame Rate:

53 fps

Horizontal Pixel:

5120

Housing:

CERAMIC

Master Clock:

310 MHz

Mounting Feature:

Maximum Operating Current:

380 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1.37

Output Interface Type:

4-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

4.50X4.50

Power Supplies (V):

3.3

Sensors or Transducers Type:

Spectral Response (nm):

400-1000

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

2 V

Minimum Supply Voltage:

1.6 V

Termination Type:

SOLDER

Vertical Pixel:

5120

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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