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NOIV1SE016KA-GDI

Onsemi

NOIV1SE016KA-GDI by Onsemi

NOIV1SE016KA-GDI by Onsemi is an image sensor with 4.5X4.5 um pixel size, 340 MHz master clock, and 4096 horizontal pixels. It operates b/w -40 to 85 °C and has a dynamic range of 56 dB. Ideal for applications requiring high-resolution imaging at a fast frame rate of 80 fps.

Median Price

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Lifecycle Status

Suppliers In-Stock

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1k+

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Digiode

USA . 2,171 parts In-Stock

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Vyrian

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Kulean Microsystems

USA . 7,585 parts In-Stock

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TANS Electronics

Latvia . 3,618 parts In-Stock

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SupplyDigital Components

Austria . 2,970 parts In-Stock

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Corphita

USA . 1,792 parts In-Stock

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Problanco Electronics

Mexico . 787 parts In-Stock

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UHIMA Technologies

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Corohmni

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Overview

Unleash the power of cutting-edge technology with the NOIV1SE016KA-GDI by Onsemi. As a leader in image sensor manufacturing, Onsemi delivers unparalleled quality and reliability. This innovative image sensor is perfect for a wide range of applications, offering crystal-clear images and exceptional performance. Experience the value and benefits of this top-of-the-line product, designed to exceed your expectations and elevate your projects to new heights. Choose Onsemi for superior image sensors that set the standard for excellence.

Feature Benefit Bullets

Pixel Size (um): 4.5X4.5

Small pixel size allows for high resolution images with sharp details.

Maximum Supply Voltage: 2 V

Higher supply voltage can provide better signal-to-noise ratio and overall performance.

Master Clock: 340 MHz

High master clock frequency enables fast data readout and processing.

Body Width: 36.1 inch

Compact size suitable for integration in various devices and systems.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensors offer low power consumption and high sensitivity.

Package Shape or Style: RECTANGULAR

Rectangular shape allows for efficient packing in circuit boards and systems.

Minimum Supply Voltage: 1.6 V

Low minimum supply voltage helps in reducing power consumption.

Maximum Operating Temperature: 85 °C

Wide operating temperature range makes it suitable for various environments.

Horizontal Pixel: 4096

High horizontal pixel count results in detailed and high-resolution images.

Output Type: CURRENT OUTPUT

Current output type provides accurate and linear signal output.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for performance in extreme cold conditions.

Maximum Operating Current: 915 mA

High operating current supports efficient sensor operation and image processing.

Housing: CERAMIC

Ceramic housing offers good durability and thermal stability for the sensor.

Dynamic Range: 56 dB

Wide dynamic range ensures accurate capture of both bright and dark areas in the image.

Vertical Pixel: 4096

High vertical pixel count complements the horizontal pixel count for detailed images.

Body Length/Diameter: 43.1 mm

Compact body size allows for easy integration and mounting in devices.

Spectral Response (nm): 400-1000

Broad spectral response range provides versatility for capturing various wavelengths of light.

Termination Type: SOLDER

Solder termination ensures secure and reliable connections in the device.

Output Interface Type: 4-WIRE INTERFACE

4-wire interface enables easy and efficient communication with external devices.

Frame Rate: 80 fps

High frame rate allows for capturing fast-moving objects with smooth motion.

Array Type: FRAME

Frame array design offers flexibility in capturing images and processing data.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting provides secure and stable installation in devices.

Technical Specifications

Image Sensors NOIV1SE016KA-GDI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT 3 TO 3.6 V SUPPLY VOLTAGE, GLOBAL SHUTTER, ROLLING SHUTTER

Array Type:

FRAME

Body Width:

36.1 inch

Body Length/Diameter:

43.1 mm

Dynamic Range:

56 dB

Frame Rate:

80 fps

Horizontal Pixel:

4096

Housing:

CERAMIC

Master Clock:

340 MHz

Mounting Feature:

Maximum Operating Current:

915 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Interface Type:

4-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

4.5X4.5

Sensors or Transducers Type:

Spectral Response (nm):

400-1000

Maximum Supply Voltage:

2 V

Minimum Supply Voltage:

1.6 V

Termination Type:

SOLDER

Vertical Pixel:

4096

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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