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AR0132AT6C00XPEA0-DPBR1

Onsemi

AR0132AT6C00XPEA0-DPBR1 by Onsemi

Onsemi's AR0132AT6C00XPEA0-DPBR1 image sensor features 3.75um pixel size, 50MHz master clock, and 115dB dynamic range. Ideal for applications requiring high-resolution imaging with a frame rate of 60fps in a compact square package.

Median Price

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Lifecycle Status

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4

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1k+

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VNN

France . 2,378 parts In-Stock

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Digiode

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Vyrian

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Nova Conductors

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AZTECH Wire

Italy . 387 parts In-Stock

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Ampacity Inc.

Singapore . 1,422 parts In-Stock

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TANS Electronics

Latvia . 6,494 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

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SupplyDigital Components

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UHIMA Technologies

Türkiye . 318 parts In-Stock

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Corphita

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Corohmni

South Africa . 152 parts In-Stock

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Aranea Global

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Overview

Capture every moment in stunning clarity with the AR0132AT6C00XPEA0-DPBR1 image sensor by Onsemi. Known for their superior quality and cutting-edge technology, Onsemi brings you a top-of-the-line product that is perfect for a wide range of applications. Whether you are designing a high-performance camera system or looking to enhance your imaging capabilities, this image sensor offers unparalleled value, benefits, and advantages. Trust Onsemi to deliver exceptional results and unlock endless possibilities with the AR0132AT6C00XPEA0-DPBR1.

Feature Benefit Bullets

Pixel Size (um): 3.75

Small pixel size allows for high resolution images with fine details.

Maximum Supply Voltage: 1.95 V

Low maximum supply voltage helps in reducing power consumption and heat generation.

Master Clock: 50 MHz

High master clock frequency enables fast data readout and processing.

Body Width: 9 inch

Compact body width makes it suitable for applications where space is limited.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensors offer low power consumption and high integration capability.

Body Height: 1.4 mm

Low body height allows for slim and compact designs.

Package Shape or Style: SQUARE

Square package shape provides ease of mounting and alignment in electronic systems.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage ensures stable operation even under low power conditions.

Maximum Operating Temperature: 105 °C

High maximum operating temperature allows for reliable performance in extreme environments.

Horizontal Pixel: 1280

High horizontal pixel count provides detailed and wider images.

Output Range: 0.40-1.50V

Wide output range allows for capturing images in varying lighting conditions.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies interface with other digital systems.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures functionality even in cold environments.

Maximum Operating Current: 130 mA

Low maximum operating current helps in reducing power consumption and heat dissipation.

Dynamic Range: 115 dB

High dynamic range allows for capturing images with high contrast scenes.

Vertical Pixel: 960

High vertical pixel count provides detailed and taller images.

Body Length/Diameter: 9 mm

Compact body length allows for easy integration in various systems.

Optical Format (inch): 1/3

1/3 inch optical format is suitable for many standard imaging applications.

Termination Type: SOLDER

Solder termination provides reliable electrical connections for long-term usage.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies the integration and communication with host systems.

Frame Rate: 60 fps

High frame rate enables smooth and real-time image capturing.

Array Type: LINEAR

Linear array type is suitable for applications requiring continuous line scanning.

Mounting Feature: SURFACE MOUNT

Surface mount capability allows for easy and secure mounting on PCBs.

Technical Specifications

Image Sensors AR0132AT6C00XPEA0-DPBR1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.5-3.1 V; ELECTRONIC ROLLING SHUTTER

Array Type:

LINEAR

Body Width:

9 inch

Body Height:

1.4 mm

Body Length/Diameter:

9 mm

Dynamic Range:

115 dB

Frame Rate:

60 fps

Horizontal Pixel:

1280

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Current:

130 mA

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.75

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

960

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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