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MT9V022177ATMC

Onsemi

MT9V022177ATMC by Onsemi

The Onsemi MT9V022177ATMC image sensor features 6x6 um pixel size, 26.6 MHz master clock, and 752x480 resolution. Ideal for applications requiring high-quality imaging in a compact form factor, such as surveillance cameras or industrial machine vision systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,524 parts In-Stock

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Vyrian

USA . 1,042 parts In-Stock

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Kulean Microsystems

USA . 7,951 parts In-Stock

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TANS Electronics

Latvia . 6,987 parts In-Stock

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SupplyDigital Components

Austria . 6,287 parts In-Stock

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Problanco Electronics

Mexico . 1,051 parts In-Stock

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Corphita

USA . 209 parts In-Stock

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UHIMA Technologies

Türkiye . 117 parts In-Stock

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Corohmni

South Africa . 116 parts In-Stock

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Overview

Capture every moment with the high-quality MT9V022177ATMC image sensor by Onsemi. Manufactured by a trusted industry leader, this sensor offers unparalleled performance and reliability. Ideal for a wide range of applications, from security cameras to medical imaging devices, this sensor provides clear and crisp images with a wide dynamic range. Experience the value and benefits of cutting-edge technology with the MT9V022177ATMC, bringing your vision to life with precision and clarity.

Feature Benefit Bullets

Pixel Size (um): 6X6

The small pixel size allows for high resolution images to be captured, perfect for detailed imaging applications.

Maximum Supply Voltage: 3.6 V

With a relatively high maximum supply voltage, this image sensor can operate with stable power input for consistent performance.

Master Clock: 26.6 MHz

The high master clock frequency enables fast data processing and high frame rates, making it suitable for applications requiring quick image capturing.

Body Width: 9 inch

The compact body width of 9 mm allows for easy integration and placement in various devices or systems.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

Being a CMOS image sensor, it offers low power consumption, high sensitivity, and fast data readout, making it efficient for imaging applications.

Minimum Supply Voltage: 3 V

The low minimum supply voltage requirement allows for flexibility in power sources and ensures compatibility with different systems.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this image sensor can perform reliably in various environmental conditions without overheating.

Horizontal Pixel: 752

The high horizontal pixel count results in detailed and sharp images with a wide field of view, suitable for various imaging applications.

Output Range: 0.30-2.60V

The wide output range allows for capturing images in various lighting conditions, ensuring accurate and consistent image quality.

Minimum Operating Temperature: -40 °C

With a low minimum operating temperature, this image sensor can withstand cold environments and continue to function effectively.

Dynamic Range: 54.4 dB

The high dynamic range allows for capturing both dark and bright areas in an image with balanced exposure, resulting in high-quality photographs.

Vertical Pixel: 480

The vertical pixel count contributes to the overall image resolution, ensuring clear and detailed images for viewing or analysis.

Body Length/Diameter: 9 mm

The compact body size of 9 mm allows for easy integration into space-constrained devices or applications.

Optical Format (inch): 1/3

The 1/3 inch optical format provides a good balance between sensor size and image quality, making it suitable for a wide range of imaging requirements.

Termination Type: SOLDER

The solder termination type ensures secure and reliable connections for the image sensor, maintaining consistent performance over time.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface simplifies the connectivity of the image sensor with other devices or systems, enhancing ease of use and integration.

Frame Rate: 60 fps

With a high frame rate of 60 fps, this image sensor can capture fast-moving subjects or dynamic scenes with smooth and clear motion, suitable for video recording or analysis.

Array Type: FRAME

The frame array type enables simultaneous capture of multiple image frames, allowing for efficient image processing and analysis.

Mounting Feature: SURFACE MOUNT

The surface mounting feature facilitates easy and secure installation of the image sensor on a PCB or device, enhancing stability and reliability.

Technical Specifications

Image Sensors MT9V022177ATMC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.3 mm

Body Length/Diameter:

9 mm

Dynamic Range:

54.4 dB

Frame Rate:

60 fps

Horizontal Pixel:

752

Master Clock:

26.6 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Package Shape or Style:

Pixel Size (um):

6X6

Sensors or Transducers Type:

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Termination Type:

SOLDER

Vertical Pixel:

480

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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