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KAI-0373-EBA-CB-AE

Onsemi

KAI-0373-EBA-CB-AE by Onsemi

KAI-0373-EBA-CB-AE by Onsemi is an image sensor with 768x484 pixels, 11.6X13.6 um pixel size, and 60 dB dynamic range. It operates b/w -25 to +40 °C and has a supply voltage range of 14.5V to 15.5V. Ideal for applications requiring high-quality imaging in a compact form factor such as industrial cameras or medical devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,200 parts In-Stock

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2,200

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Digiode

USA . 553 parts In-Stock

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553

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TANS Electronics

Latvia . 6,479 parts In-Stock

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6,479

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Kulean Microsystems

USA . 5,736 parts In-Stock

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5,736

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SupplyDigital Components

Austria . 4,335 parts In-Stock

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4,335

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Corphita

USA . 2,461 parts In-Stock

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2,461

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Problanco Electronics

Mexico . 620 parts In-Stock

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UHIMA Technologies

Türkiye . 163 parts In-Stock

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Corohmni

South Africa . 159 parts In-Stock

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Overview

Elevate your imaging experience with the KAI-0373-EBA-CB-AE by Onsemi. As a leading manufacturer in image sensors, Onsemi guarantees top-notch quality and reliability in every product. Ideal for a wide range of applications, this CCD image sensor boasts exceptional performance and precision. Unlock endless possibilities and capture stunning visuals with ease. Trust in Onsemi to deliver excellence in every pixel, bringing value and innovation to your projects. Step up your game with the KAI-0373-EBA-CB-AE and see the difference for yourself.

Feature Benefit Bullets

Pixel Size (um): 11.6X13.6

Large pixel size allows for better light sensitivity and improved image quality, making this image sensor suitable for low-light conditions.

Maximum Supply Voltage: 15.5 V

Higher maximum supply voltage provides more headroom for power requirements and can help improve overall performance and stability of the image sensor.

Body Width: 20.19 inch

Compact body width makes it suitable for integration into various devices without taking up too much space.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors are known for their high-quality image output and low noise performance, making this image sensor a good choice for professional imaging applications.

Minimum Operating Temperature: 25 °C

Wide operating temperature range allows for use in various environmental conditions, ensuring reliability and performance even in extreme temperatures.

Dynamic Range: 60 dB

High dynamic range enables the image sensor to capture a wide range of brightness levels, resulting in detailed and accurate images with excellent contrast.

Optical Format (inch): 2/3

Standard 2/3 inch optical format makes this image sensor compatible with a wide range of lenses and imaging systems.

Mounting Feature: THROUGH HOLE MOUNT

Through-hole mounting feature provides secure and reliable installation, ensuring stability and durability of the image sensor in various applications.

Technical Specifications

Image Sensors KAI-0373-EBA-CB-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 9 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

20.19 inch

Body Height:

4.32 mm

Body Length/Diameter:

30.48 mm

Dynamic Range:

60 dB

Horizontal Pixel:

768

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

40 Cel

Minimum Operating Temperature:

25 Cel

Optical Format (inch):

2/3

Package Shape or Style:

Pixel Size (um):

11.6X13.6

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

484

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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