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AR0135CS2M25SUEA0-DPBR1

Onsemi

AR0135CS2M25SUEA0-DPBR1 by Onsemi

Onsemi's AR0135CS2M25SUEA0-DPBR1 is a 1/3 inch CMOS image sensor with 1280x960 pixels, offering a pixel size of 3.75um. It operates at a max supply voltage of 1.95V and features a master clock of 50MHz. Ideal for applications requiring high-resolution imaging with a digital output interface.

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1k+

AR0135CS2M25SUEA0-DPBR1 by Onsemi
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Vyrian

USA . 8,434 parts In-Stock

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Digiode

USA . 2,206 parts In-Stock

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Native Components

USA . 455 parts In-Stock

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$1.621

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Northwest PG Solutions

USA . 2,079 parts In-Stock

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AZTECH Wire

Italy . 1,014 parts In-Stock

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TANS Electronics

Latvia . 7,456 parts In-Stock

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SupplyDigital Components

Austria . 6,429 parts In-Stock

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Problanco Electronics

Mexico . 5,701 parts In-Stock

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Authorized Procurement Solutions

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Corphita

USA . 1,100 parts In-Stock

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Kulean Microsystems

USA . 927 parts In-Stock

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Corohmni

South Africa . 96 parts In-Stock

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UHIMA Technologies

Türkiye . 53 parts In-Stock

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Overview

Capture vivid and detailed images with the AR0135CS2M25SUEA0-DPBR1 image sensor by Onsemi. Renowned for its high-quality products, Onsemi delivers top-notch performance in the field of image sensors. Perfect for a range of applications, this sensor offers exceptional value and benefits to customers looking for precision and reliability in their imaging solutions. Elevate your projects with the advanced technology and superior capabilities of the AR0135CS2M25SUEA0-DPBR1 image sensor.

Feature Benefit Bullets

Pixel Size (um): 3.75

The small pixel size allows for high resolution images with fine details, making this image sensor a good choice for applications requiring clear and crisp images.

Maximum Supply Voltage: 1.95 V

The higher maximum supply voltage provides flexibility in power supply options and allows for stable operation of the image sensor under varying conditions.

Master Clock: 50 MHz

The high master clock frequency enables fast data readout and processing, making this image sensor suitable for applications that require quick image capture and output.

Output Type: DIGITAL VOLTAGE

The digital voltage output simplifies interface with other digital devices and systems, making integration of this image sensor seamless and efficient.

Dynamic Range: 71.1 dB

The wide dynamic range allows the image sensor to capture both bright and dark areas in a scene with clarity and detail, making it a versatile choice for various lighting conditions.

Technical Specifications

Image Sensors AR0135CS2M25SUEA0-DPBR1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT ANALOG VOLTAGE OF 2.5 V TO 3.1 V

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.39 mm

Body Length/Diameter:

9 mm

Dynamic Range:

71.1 dB

Frame Rate:

54 fps

Horizontal Pixel:

1280

JESD-609 Code:

e1

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Current:

90 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.75

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

TIN SILVER COPPER

Termination Type:

SOLDER

Vertical Pixel:

960

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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