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NOIX1SN9400B-LTI

Onsemi

NOIX1SN9400B-LTI by Onsemi

NOIX1SN9400B-LTI by Onsemi is an Image Sensor with 3.2x3.2 um Pixel Size, 32.4 MHz Master Clock, and 3072 Horizontal Pixels. It operates b/w -40 to 85 °C and has a dynamic range of 68 dB. Ideal for applications requiring high-resolution imaging at a fast frame rate of 90 fps in a compact surface-mount package.

Median Price

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Lifecycle Status

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5

In-Stock Inventory

1k+

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DigiKey

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Vyrian

USA . 5,279 parts In-Stock

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Digiode

USA . 2,069 parts In-Stock

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USA . 275 parts In-Stock

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Problanco Electronics

Mexico . 8,357 parts In-Stock

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Kulean Microsystems

USA . 5,481 parts In-Stock

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SupplyDigital Components

Austria . 5,078 parts In-Stock

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TANS Electronics

Latvia . 2,258 parts In-Stock

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Corphita

USA . 1,958 parts In-Stock

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Corohmni

South Africa . 363 parts In-Stock

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UHIMA Technologies

Türkiye . 251 parts In-Stock

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Overview

Experience the cutting-edge technology of the NOIX1SN9400B-LTI by Onsemi, a top-tier manufacturer known for producing high-quality image sensors. Designed for a wide range of applications, this innovative product offers unmatched precision and reliability. With its advanced features and seamless integration, customers can expect superior performance and exceptional results. Upgrade your imaging systems with the NOIX1SN9400B-LTI and discover the perfect blend of value, benefits, and advantages that will take your projects to the next level.

Feature Benefit Bullets

Pixel Size (um): 3.2X3.2

Smaller pixel size allows for higher resolution images to be captured.

Maximum Supply Voltage: 1.3 V

Low voltage requirement helps in reducing power consumption.

Master Clock: 32.4 MHz

High clock speed enables fast data readout and processing.

Body Width: 19.9 inch

Compact size makes it suitable for integration into various devices.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

CMOS sensor technology provides high sensitivity and low noise performance.

Body Height: 2.54 mm

Low profile design makes it suitable for slim devices.

Package Shape or Style: RECTANGULAR

Rectangular package makes it easy to mount and integrate.

Minimum Supply Voltage: 1.1 V

Low minimum supply voltage helps in reducing power consumption further.

Maximum Operating Temperature: 85 °C

Wide operating temperature range allows for use in various environments.

Horizontal Pixel: 3072

High horizontal pixel count enables detailed image capture.

Output Range: 0.4-1.5V

Wide output range provides flexibility in signal processing.

Output Type: DIGITAL VOLTAGE

Digital output simplifies signal processing and interfacing.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for use in cold environments.

Maximum Operating Current: 240 mA

Low operating current helps in reducing power consumption.

Housing: CERAMIC, METAL-SEALED COFIRED

Durable housing material ensures reliability in demanding conditions.

Dynamic Range: 68 dB

High dynamic range enables capturing both bright and dark areas accurately.

Vertical Pixel: 3072

High vertical pixel count enables detailed image capture.

Body Length/Diameter: 20.88 mm

Compact size and shape for easy integration and mounting.

Spectral Response (nm): 300-1000

Wide spectral response range allows for capturing images in different wavelengths.

Optical Format (inch): 1/1.2

Advanced optical format for better image quality and sensitivity.

Termination Type: SOLDER

Solder termination provides a secure and reliable connection.

Output Interface Type: I2C/SPI INTERFACE

Multiple output interface options for easy integration with different systems.

Frame Rate: 90 fps

High frame rate allows for capturing fast-moving objects with clarity.

Array Type: FRAME

Frame array type enables efficient image capture and processing.

Mounting Feature: SURFACE MOUNT

Surface mount capability for easy and secure mounting on PCBs.

Technical Specifications

Image Sensors NOIX1SN9400B-LTI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT ANALOG VOLTAGE OF 2.7 V TO 2.9V

Array Type:

FRAME

Body Width:

19.9 inch

Body Height:

2.54 mm

Body Length/Diameter:

20.88 mm

Dynamic Range:

68 dB

Frame Rate:

90 fps

Horizontal Pixel:

3072

Housing:

CERAMIC, METAL-SEALED COFIRED

Master Clock:

32.4 MHz

Mounting Feature:

Maximum Operating Current:

240 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/1.2

Output Interface Type:

I2C/SPI INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.2X3.2

Sensors or Transducers Type:

Spectral Response (nm):

300-1000

Maximum Supply Voltage:

1.3 V

Minimum Supply Voltage:

1.1 V

Termination Type:

SOLDER

Vertical Pixel:

3072

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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