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NOIX2SE8000B-LTI1

Onsemi

NOIX2SE8000B-LTI1 by Onsemi

NOIX2SE8000B-LTI1 by Onsemi is an image sensor with 3.2x3.2um pixel size, 32.4MHz master clock, and 4096 horizontal pixels. It operates b/w -40 to 85 °C, outputs digital voltage in the range of 0.4-1.5V, and has a dynamic range of 68dB. Ideal for applications requiring high-resolution imaging at a fast frame rate such as surveillance systems or industrial cameras.

Median Price

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Lifecycle Status

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Vyrian

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Digiode

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Flip Electronics

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AZTECH Wire

Italy . 817 parts In-Stock

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TANS Electronics

Latvia . 8,166 parts In-Stock

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Authorized Procurement Solutions

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Problanco Electronics

Mexico . 7,655 parts In-Stock

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Corphita

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SupplyDigital Components

Austria . 1,016 parts In-Stock

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Kulean Microsystems

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UHIMA Technologies

Türkiye . 592 parts In-Stock

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Corohmni

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Overview

Discover a new world of clarity and precision with the NOIX2SE8000B-LTI1 Image Sensor by Onsemi. Crafted with expertise and innovation, this sensor offers unparalleled quality and reliability for a wide range of applications. From capturing stunning images to enabling cutting-edge technology, this sensor provides exceptional value and performance. Experience the benefits of superior image quality, enhanced sensitivity, and seamless integration, all in a compact and efficient package. Elevate your projects with the unmatched advantages of the NOIX2SE8000B-LTI1 and see the difference it can make for your vision.

Feature Benefit Bullets

Pixel Size (um): 3.2X3.2

Small pixel size allows for high resolution images to be captured with detailed clarity.

Maximum Supply Voltage: 1.3 V

Efficient power usage with a low maximum supply voltage.

Master Clock: 32.4 MHz

High master clock frequency enables fast data processing and high frame rates.

Body Width: 19.9 inch

Compact body width allows for easy integration into various devices.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

Uses advanced CMOS sensor technology for accurate and high-quality image capture.

Minimim Supply Voltage: 1.1 V

Low minimum supply voltage ensures efficient power consumption.

Maximum Operating Temperature: 85 °C

Wide operating temperature range allows for use in various environments.

Horizontal Pixel: 4096

High horizontal pixel count enables detailed image resolution.

Output Range: 0.4-1.5V

Versatile output range for compatibility with various systems.

Output Type: DIGITAL VOLTAGE

Digital voltage output ensures easy interfacing with digital systems.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for use in extreme cold conditions.

Maximum Operating Current: 240 mA

Efficient power usage with a low maximum operating current.

Housing: CERAMIC, METAL-SEALED COFIRED

Durable housing materials provide protection and longevity to the sensor.

Dynamic Range: 68 dB

Wide dynamic range allows for capturing images with both bright and dark areas accurately.

Vertical Pixel: 2160

High vertical pixel count enables detailed image resolution.

Body Length/Diameter: 20.88 mm

Compact body size allows for easy integration into various devices.

Spectral Response (nm): 300-1000

Wide spectral response range allows for capturing a broad range of colors and light wavelengths.

Optical Format (inch): 1/1.1

Optical format size ensures compatibility with various lenses and optical systems.

Termination Type: SOLDER

Solder termination type for secure and reliable electrical connections.

Output Interface Type: I2C/SPI INTERFACE

Flexible output interface options for easy integration with different systems.

Frame Rate: 80 fps

High frame rate allows for capturing fast-moving subjects with clarity.

Array Type: FRAME

Frame array type for efficient image capture and processing.

Mounting Feature: SURFACE MOUNT

Surface mount feature for easy integration and mounting in electronic devices.

Technical Specifications

Image Sensors NOIX2SE8000B-LTI1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT ANALOG VOLTAGE OF 2.7 V TO 2.9V

Array Type:

FRAME

Body Width:

19.9 inch

Body Height:

2.54 mm

Body Length/Diameter:

20.88 mm

Dynamic Range:

68 dB

Frame Rate:

80 fps

Horizontal Pixel:

4096

Housing:

CERAMIC, METAL-SEALED COFIRED

Master Clock:

32.4 MHz

Mounting Feature:

Maximum Operating Current:

240 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/1.1

Output Interface Type:

I2C/SPI INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.2X3.2

Sensors or Transducers Type:

Spectral Response (nm):

300-1000

Maximum Supply Voltage:

1.3 V

Minimum Supply Voltage:

1.1 V

Termination Type:

SOLDER

Vertical Pixel:

2160

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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