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NOIX1SE9400B-LTI1

Onsemi

NOIX1SE9400B-LTI1 by Onsemi

NOIX1SE9400B-LTI1 by Onsemi is an Image Sensor with 3.2X3.2 um pixel size, 32.4 MHz master clock, and 3072 horizontal pixels. Ideal for applications requiring a digital voltage output interface, such as frame arrays in cameras or imaging devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 6,992 parts In-Stock

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Digiode

USA . 2,071 parts In-Stock

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AZTECH Wire

Italy . 1,072 parts In-Stock

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$12.300

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SupplyDigital Components

Austria . 8,315 parts In-Stock

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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Problanco Electronics

Mexico . 5,527 parts In-Stock

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Kulean Microsystems

USA . 3,509 parts In-Stock

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TANS Electronics

Latvia . 1,187 parts In-Stock

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Corphita

USA . 1,142 parts In-Stock

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UHIMA Technologies

Türkiye . 492 parts In-Stock

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Corohmni

South Africa . 460 parts In-Stock

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Overview

Capture the world in stunning detail with the NOIX1SE9400B-LTI1 by Onsemi. As a leading manufacturer of image sensors, Onsemi delivers unparalleled quality and reliability. Ideal for a wide range of applications, this image sensor boasts a high pixel count and impressive dynamic range, ensuring crisp, clear images every time. With a compact design and easy-to-use interface, this sensor offers exceptional value and performance for all your imaging needs. Upgrade your imaging capabilities today with the NOIX1SE9400B-LTI1 from Onsemi.

Feature Benefit Bullets

Pixel Size (um): 3.2X3.2

Smaller pixel size allows for higher resolution and better image quality.

Maximum Supply Voltage: 1.3 V

Low power consumption and can operate efficiently with lower voltage.

Master Clock: 32.4 MHz

High clock frequency enables faster data processing and image capture.

Body Width: 19.9 inch

Compact size allows for easy integration into different systems or devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensor technology provides low noise and high sensitivity for clear images.

Spectral Response (nm): 300-1000

Wide spectral response range makes it versatile for capturing images in different lighting conditions.

Frame Rate: 90 fps

High frame rate enables capturing fast-moving objects or scenes with smooth motion.

Technical Specifications

Image Sensors NOIX1SE9400B-LTI1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT ANALOG VOLTAGE OF 2.7 V TO 2.9V

Array Type:

FRAME

Body Width:

19.9 inch

Body Height:

2.54 mm

Body Length/Diameter:

20.88 mm

Dynamic Range:

68 dB

Frame Rate:

90 fps

Horizontal Pixel:

3072

Housing:

CERAMIC, METAL-SEALED COFIRED

Master Clock:

32.4 MHz

Mounting Feature:

Maximum Operating Current:

240 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/1.2

Output Interface Type:

I2C/SPI INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.2X3.2

Sensors or Transducers Type:

Spectral Response (nm):

300-1000

Maximum Supply Voltage:

1.3 V

Minimum Supply Voltage:

1.1 V

Termination Type:

SOLDER

Vertical Pixel:

3072

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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