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NOIX0SE045KB-GTI-E

Onsemi

NOIX0SE045KB-GTI-E by Onsemi

NOIX0SE045KB-GTI-E by Onsemi is a CMOS image sensor with 8192 x 5460 resolution, 1.4" optical format, and 48 fps frame rate. Housed in ceramic package, it features through hole mounting ideal for high-resolution imaging applications.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

NOIX0SE045KB-GTI-E by Onsemi
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Digiode

USA . 1,879 parts In-Stock

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Vyrian

USA . 219 parts In-Stock

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SupplyDigital Components

Austria . 8,114 parts In-Stock

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TANS Electronics

Latvia . 4,452 parts In-Stock

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Problanco Electronics

Mexico . 2,494 parts In-Stock

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Kulean Microsystems

USA . 2,104 parts In-Stock

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Corphita

USA . 1,758 parts In-Stock

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UHIMA Technologies

Türkiye . 723 parts In-Stock

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Authorized Procurement Solutions

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Corohmni

South Africa . 467 parts In-Stock

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Overview

Unlock a world of high-quality imaging with the NOIX0SE045KB-GTI-E by Onsemi. Dive into crystal-clear visuals and detailed images with this cutting-edge CMOS image sensor. Whether you're capturing moments in photography, enhancing security systems, or revolutionizing medical imaging, this rectangular sensor offers unparalleled precision and reliability. Trust in Onsemi's reputation for excellence and innovation as you experience the value and benefits of this powerful technology. Elevate your projects with the NOIX0SE045KB-GTI-E and witness the difference quality makes.

Feature Benefit Bullets

Sensors Type: IMAGE SENSOR, CMOS

CMOS sensors are known for their low power consumption and high image quality, making this product efficient and producing clear images.

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration into various devices and systems.

Horizontal Pixel: 8192

High resolution with 8192 horizontal pixels ensures detailed and crisp images.

Housing: CERAMIC

Ceramic housing provides durability and protection, making the sensor suitable for various environments.

Vertical Pixel: 5460

With 5460 vertical pixels, this sensor captures images with great clarity and depth.

Optical Format (inch): 1.4

Optical format of 1.4 inch allows for versatile usage in different applications.

Termination Type: SOLDER

Solder termination type ensures reliable and secure connections for efficient performance.

Frame Rate: 48 fps

High frame rate of 48 fps enables capturing fast-moving objects with smooth motion.

Array Type: FRAME

Frame array type provides organized and structured image capture for improved processing.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature allows for easy and secure installation in various devices and systems.

Technical Specifications

Image Sensors NOIX0SE045KB-GTI-E attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER

Array Type:

FRAME

Frame Rate:

48 fps

Horizontal Pixel:

8192

Housing:

CERAMIC

Mounting Feature:

Optical Format (inch):

1.4

Package Shape or Style:

Sensors or Transducers Type:

Termination Type:

SOLDER

Vertical Pixel:

5460

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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