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MT9M413C36STM-DR

Onsemi

MT9M413C36STM-DR by Onsemi

The Onsemi MT9M413C36STM-DR is a CMOS image sensor with 12x12 um pixel size, 1280 horizontal pixels, and 1024 vertical pixels. It operates at a max supply voltage of 3.6V and has a master clock of 66 MHz. Ideal for applications requiring high-resolution imaging in environments with temperatures ranging from -5 to 60 °C.

Median Price

$1,202.866

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 1 parts In-Stock

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$979.920

100+ parts

$921.120

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$862.330

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$979.920

$921.120

$862.330

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Verical

USA . 1 parts In-Stock

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$1,425.813

100+ parts

$1,340.263

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$1,211.938

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1

$1,425.813

$1,340.263

$1,211.938

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Distributors (In-Stock)

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Digiode

USA . 670 parts In-Stock

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$1,083.618

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670

$1,083.618

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Vyrian

USA . 5,260 parts In-Stock

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AZTECH Wire

Italy . 975 parts In-Stock

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$9.970

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975

$9.970

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Corphita

USA . 1,880 parts In-Stock

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$1,026.585

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$1,026.585

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Corohmni

South Africa . 394 parts In-Stock

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$1,140.650

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Problanco Electronics

Mexico . 6,749 parts In-Stock

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TANS Electronics

Latvia . 6,154 parts In-Stock

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Kulean Microsystems

USA . 2,066 parts In-Stock

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SupplyDigital Components

Austria . 1,998 parts In-Stock

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UHIMA Technologies

Türkiye . 292 parts In-Stock

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Overview

Capture stunning images with the MT9M413C36STM-DR by Onsemi, a top-of-the-line image sensor designed for high-performance applications. With a pixel size of 12X12 um and a maximum supply voltage of 3.6 V, this CMOS sensor delivers exceptional quality and precision. From surveillance systems to medical imaging, this sensor offers unmatched value and reliability. Trust Onsemi's reputation for excellence and elevate your imaging solutions with the MT9M413C36STM-DR.

Feature Benefit Bullets

Pixel Size (um): 12X12

The small pixel size allows for high resolution images to be captured with detailed clarity, making this image sensor a good choice for applications requiring sharp imaging.

Maximum Supply Voltage: 3.6 V

The high maximum supply voltage ensures reliable and stable operation of the image sensor, making it suitable for various power supply configurations.

Master Clock: 66 MHz

The high master clock frequency of 66 MHz enables fast data processing and high-speed image capture, making this image sensor suitable for applications requiring quick response times.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

Being a CMOS image sensor, it offers low power consumption and high sensitivity, making it a desirable choice for battery-powered devices or applications where image quality is crucial.

Minimum Supply Voltage: 3 V

The low minimum supply voltage allows for flexibility in power supply options and ensures compatibility with a wide range of systems, making this image sensor versatile and easy to integrate.

Maximum Operating Temperature: 60 °C

With a high operating temperature range of 60 °C, this image sensor is suitable for use in challenging environments or applications that require reliable performance in extended temperature conditions.

Horizontal Pixel: 1280

The high horizontal pixel count of 1280 results in detailed image capture with increased resolution, making this image sensor ideal for applications where precise imaging is essential.

Output Type: DIGITAL VOLTAGE

The digital voltage output simplifies data processing and integration with digital systems, offering a convenient and efficient solution for capturing and transferring image data.

Minimum Operating Temperature: -5 °C

The low minimum operating temperature of -5 °C ensures reliable performance even in cold environments, making this image sensor suitable for applications requiring operation in varying temperature conditions.

Maximum Operating Current: 165 mA

The moderate maximum operating current of 165 mA allows for efficient power consumption while maintaining optimal performance, making this image sensor energy-efficient and cost-effective.

Housing: CERAMIC

The ceramic housing offers durability and protection for the image sensor, ensuring reliability in harsh conditions or applications with potential environmental hazards.

Dynamic Range: 59 dB

The high dynamic range of 59 dB enables the image sensor to capture a wide range of light intensities with minimal distortion, making it suitable for applications requiring accurate color reproduction and contrast.

Vertical Pixel: 1024

The high vertical pixel count of 1024 enhances image quality and detail, making this image sensor ideal for applications where vertical resolution is crucial for capturing accurate images.

Termination Type: SOLDER

The solder termination type allows for secure and reliable connections, ensuring seamless integration of the image sensor into various electronic systems or devices.

Frame Rate: 500 fps

The high frame rate of 500 frames per second enables fast and smooth image capture, making this image sensor suitable for applications requiring high-speed imaging or motion analysis.

Array Type: FRAME

The frame array type enables simultaneous capture of multiple pixels, resulting in efficient image processing and enhanced image quality, making this image sensor a reliable choice for applications requiring real-time imaging.

Mounting Feature: SURFACE MOUNT

The surface mounting feature allows for easy and secure installation of the image sensor on circuit boards or electronic devices, ensuring quick and efficient integration into various systems or products.

Technical Specifications

Image Sensors MT9M413C36STM-DR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC SHUTTER

Array Type:

FRAME

Dynamic Range:

59 dB

Frame Rate:

500 fps

Horizontal Pixel:

1280

Housing:

CERAMIC

Master Clock:

66 MHz

Mounting Feature:

Maximum Operating Current:

165 mA

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-5 Cel

Optical Format (inch):

1

Output Type:

Pixel Size (um):

12X12

Sensors or Transducers Type:

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Termination Type:

SOLDER

Vertical Pixel:

1024

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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