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MT9M001C12STC-DR

Onsemi

MT9M001C12STC-DR by Onsemi

Onsemi's MT9M001C12STC-DR is a 5.2x5.2 um CMOS image sensor with 1280x1024 resolution, operating at 48 MHz master clock. It offers a dynamic range of 68.2 dB and outputs digital voltage signals via a 2-wire interface. Ideal for applications requiring high-quality imaging at up to 30 fps in a compact square package.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 2,196 parts In-Stock

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Digiode

USA . 104 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Aztec Data Supply Inc.

USA . 3,993 parts In-Stock

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$3.245

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AZTECH Wire

Italy . 697 parts In-Stock

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Ampacity Inc.

Singapore . 1,169 parts In-Stock

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$16.750

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Kulean Microsystems

USA . 5,707 parts In-Stock

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TANS Electronics

Latvia . 4,291 parts In-Stock

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Problanco Electronics

Mexico . 3,035 parts In-Stock

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Continental Prestige Electronics

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SupplyDigital Components

Austria . 1,728 parts In-Stock

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Corphita

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Aranea Global

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Argo Parts USA

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Corohmni

South Africa . 474 parts In-Stock

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UHIMA Technologies

Türkiye . 181 parts In-Stock

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Overview

Elevate your imaging solutions with the MT9M001C12STC-DR by Onsemi. As a leading manufacturer of image sensors, Onsemi delivers top-notch quality and reliability in every product. Perfect for a wide range of applications, this image sensor offers unparalleled performance and precision. Capture stunning visuals with ease and efficiency, thanks to the advanced technology packed into this small yet powerful device. Experience the value and benefits of superior image processing, unmatched clarity, and seamless integration. Upgrade your imaging experience with the MT9M001C12STC-DR and see the difference for yourself.

Feature Benefit Bullets

Pixel Size (um): 5.2X5.2

The small pixel size allows for high resolution imaging and detail in captured images.

Maximum Supply Voltage: 3.6 V

Provides adequate power supply for optimal performance without risk of damage from overvoltage.

Master Clock: 48 MHz

High master clock frequency enables fast data readout and processing speed.

Body Width: 14.22 inch

Compact size makes it suitable for integration into various devices and systems.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS technology offers lower power consumption, higher sensitivity, and better image quality compared to other sensor types.

Body Height: 2.25 mm

Low profile design for efficient space utilization and integration in slim devices.

Package Shape or Style: SQUARE

Square package design offers ease of mounting and alignment during assembly.

Minimum Supply Voltage: 3 V

Ensures reliable operation even at low power supply levels.

Maximum Operating Temperature: 70 °C

Wide operating temperature range allows for use in various environmental conditions.

Horizontal Pixel: 1280

High horizontal pixel count provides sharp and detailed images with more accurate color reproduction.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies signal processing and integration with digital systems.

Minimum Operating Temperature: 0 °C

Wide operating temperature range ensures reliable performance in different temperature conditions.

Maximum Operating Current: 24 mA

Low operating current consumption for energy efficiency and extended battery life in portable devices.

Housing: CERAMIC

Ceramic housing offers durability, thermal stability, and protection against external factors.

Dynamic Range: 68.2 dB

Wide dynamic range enables capturing of detailed images in both bright and dark areas within the same scene.

Vertical Pixel: 1024

High vertical pixel count enhances image resolution and clarity for better overall image quality.

Body Length/Diameter: 14.22 mm

Compact body size allows for easy integration and installation in various devices.

Optical Format (inch): 1/2

1/2 inch optical format provides a good balance between sensor size and image quality for versatile applications.

Termination Type: SOLDER

Solder termination offers secure and reliable connection during assembly for consistent performance.

Output Interface Type: 2-WIRE INTERFACE

2-Wire interface simplifies connectivity and communication with external devices for easy integration.

Frame Rate: 30 fps

High frame rate allows for smooth and fluid video recording and capture of fast-moving subjects.

Array Type: FRAME

Frame array configuration provides efficient image capture and processing for various applications.

Mounting Feature: SURFACE MOUNT

Surface mount capability simplifies installation and integration into circuit boards or devices for compact design and space-saving.

Technical Specifications

Image Sensors MT9M001C12STC-DR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER

Array Type:

FRAME

Body Width:

14.22 inch

Body Height:

2.25 mm

Body Length/Diameter:

14.22 mm

Dynamic Range:

68.2 dB

Frame Rate:

30 fps

Horizontal Pixel:

1280

Housing:

CERAMIC

Master Clock:

48 MHz

Mounting Feature:

Maximum Operating Current:

24 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Optical Format (inch):

1/2

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

5.2X5.2

Sensors or Transducers Type:

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Termination Type:

SOLDER

Vertical Pixel:

1024

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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