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AR0233ATSC17XUEA1-DPBR-E

Onsemi

AR0233ATSC17XUEA1-DPBR-E by Onsemi

Onsemi's AR0233ATSC17XUEA1-DPBR-E is a CMOS image sensor with 2048x1280 resolution, 140 dB dynamic range, and 1/2.5-inch optical format. It operates at 45 fps and is suitable for applications requiring high-quality imaging such as surveillance cameras or industrial machine vision systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Digiode

USA . 1,563 parts In-Stock

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Vyrian

USA . 441 parts In-Stock

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Kulean Microsystems

USA . 8,380 parts In-Stock

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TANS Electronics

Latvia . 4,763 parts In-Stock

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SupplyDigital Components

Austria . 3,607 parts In-Stock

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Northwest PG Solutions

USA . 1,538 parts In-Stock

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Corphita

USA . 1,341 parts In-Stock

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Problanco Electronics

Mexico . 1,098 parts In-Stock

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Corohmni

South Africa . 390 parts In-Stock

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UHIMA Technologies

Türkiye . 356 parts In-Stock

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Native Components

USA . 335 parts In-Stock

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Overview

Capture every moment in stunning clarity with the AR0233ATSC17XUEA1-DPBR-E Image Sensor from Onsemi. Renowned for their top-notch quality and cutting-edge technology, Onsemi delivers exceptional performance and reliability in all their products. Ideal for a wide range of applications in industries such as automotive, surveillance, and consumer electronics, this CMOS sensor offers unparalleled image quality and precision. Elevate your projects to the next level with the AR0233ATSC17XUEA1-DPBR-E, where innovation meets excellence.

Feature Benefit Bullets

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors are known for low power consumption and high image quality, making this product energy efficient and capable of capturing clear images.

Horizontal Pixel: 2048

Higher pixel count results in higher resolution images, providing detailed and crisp visuals.

Dynamic Range: 140 dB

With a high dynamic range, this sensor can capture both bright and dark areas in the image accurately, ensuring a wider range of exposure levels without losing detail.

Vertical Pixel: 1280

Combined with the high horizontal pixel count, the vertical pixel count enhances the overall sharpness and clarity of images.

Optical Format (inch): 1/2.5

The 1/2.5 inch optical format provides a good balance between size and performance, making this sensor suitable for compact devices while still delivering high-quality images.

Frame Rate: 45 fps

The high frame rate allows for smooth and fluid video recording, making this sensor ideal for capturing fast-moving subjects with minimal motion blur.

Array Type: FRAME

The frame array type enables the sensor to capture multiple frames quickly, improving overall image processing speed and efficiency.

Technical Specifications

Image Sensors AR0233ATSC17XUEA1-DPBR-E attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ISO 26262

Array Type:

FRAME

Dynamic Range:

140 dB

Frame Rate:

45 fps

Horizontal Pixel:

2048

Optical Format (inch):

1/2.5

Sensors or Transducers Type:

Vertical Pixel:

1280

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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