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AR0231AT7R00XUEA0-DRBR-E

Onsemi

AR0231AT7R00XUEA0-DRBR-E by Onsemi

Onsemi's AR0231AT7R00XUEA0-DRBR-E is a CMOS image sensor with 3um pixel size, 27 MHz master clock, and 120dB dynamic range. Ideal for digital cameras, surveillance systems, and automotive applications due to its high resolution and fast frame rate of 60fps.

Median Price

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Lifecycle Status

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1k+

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Digiode

USA . 2,157 parts In-Stock

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Vyrian

USA . 1,584 parts In-Stock

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Native Components

USA . 229 parts In-Stock

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$7.190

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SupplyDigital Components

Austria . 7,819 parts In-Stock

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Kulean Microsystems

USA . 7,225 parts In-Stock

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Problanco Electronics

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Northwest PG Solutions

USA . 1,855 parts In-Stock

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TANS Electronics

Latvia . 1,606 parts In-Stock

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Perfect Parts

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Corphita

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Corohmni

South Africa . 152 parts In-Stock

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UHIMA Technologies

Türkiye . 104 parts In-Stock

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Authorized Procurement Solutions

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GreenTree Electronics

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Overview

Capture stunning images with the AR0231AT7R00XUEA0-DRBR-E Image Sensor from Onsemi. Known for their high-quality products, Onsemi delivers exceptional performance and reliability. This advanced CMOS sensor boasts a wide dynamic range of 120 dB and a fast frame rate of 60 fps, making it perfect for applications in automotive cameras, surveillance systems, drones, and more. Experience superior image quality and precision with Onsemi's cutting-edge technology. Elevate your projects with the AR0231AT7R00XUEA0-DRBR-E Image Sensor today!

Feature Benefit Bullets

Pixel Size (um): 3

Smaller pixel size allows for higher resolution images with more detail.

Maximum Supply Voltage: 1.26 V

Lower maximum supply voltage can help in reducing power consumption and heat generation.

Master Clock: 27 MHz

Higher master clock frequency enables faster data readout and processing.

Body Width: 10 inch

Compact body width makes it suitable for integration into various devices and applications.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors are known for their low power consumption and high image quality.

Body Height: 1.55 mm

Slim body height allows for easy integration and space-saving in compact designs.

Package Shape or Style: RECTANGULAR

Rectangular package shape offers simplicity in mounting and alignment during assembly.

Minimum Supply Voltage: 1.14 V

Low minimum supply voltage ensures compatibility with a wide range of power sources.

Maximum Operating Temperature: 125 °C

High maximum operating temperature makes the sensor suitable for harsh environments and extended use.

Horizontal Pixel: 1928

High horizontal pixel count enables high-resolution and detailed image capture.

Output Type: DIGITAL OUTPUT

Digital output simplifies connectivity and data transmission to external devices.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for operation in cold environments without performance degradation.

Terminal Finish: TIN SILVER COPPER

Terminal finish provides good conductivity and resistance to corrosion for reliable performance.

Maximum Operating Current: 210 mA

Low operating current helps in reducing power consumption and heat generation during operation.

Dynamic Range: 120 dB

High dynamic range allows for capturing a wide range of light intensities without losing image quality.

Vertical Pixel: 1208

High vertical pixel count contributes to better image resolution and quality.

Body Length/Diameter: 11 mm

Compact body length/diameter offers flexibility in design and integration into various devices.

Optical Format (inch): 1/2.7

Standard optical format ensures compatibility with a wide range of lenses and optical systems.

Termination Type: SOLDER

Solder termination provides secure and reliable connections for uninterrupted data transmission.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies connectivity and communication with external devices.

Frame Rate: 60 fps

High frame rate enables smooth and detailed video recording and live imaging.

Array Type: LINEAR

Linear array type provides uniform image capture across the sensor surface for consistent image quality.

Mounting Feature: SURFACE MOUNT

Surface mounting feature allows for easy and secure attachment to circuit boards or other surfaces.

Technical Specifications

Image Sensors AR0231AT7R00XUEA0-DRBR-E attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

LINEAR

Body Width:

10 inch

Body Height:

1.55 mm

Body Length/Diameter:

11 mm

Dynamic Range:

120 dB

Frame Rate:

60 fps

Horizontal Pixel:

1928

JESD-609 Code:

e1

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

210 mA

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/2.7

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

3

Sensors or Transducers Type:

Maximum Supply Voltage:

1.26 V

Minimum Supply Voltage:

1.14 V

Terminal Finish:

TIN SILVER COPPER

Termination Type:

SOLDER

Vertical Pixel:

1208

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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