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MT9V022I77ATC

Onsemi

MT9V022I77ATC by Onsemi

MT9V022I77ATC by Onsemi is a 1/3-inch CMOS image sensor with 752x480 pixels. It operates at 26.6 MHz master clock, offers a dynamic range of 54.4 dB, and supports a frame rate of 60 fps. Ideal for applications requiring high-resolution imaging in industrial and automotive sectors.

Median Price

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Lifecycle Status

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In-Stock Inventory

1k+

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Vyrian

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Digiode

USA . 3,069 parts In-Stock

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First Choice Components Inc.

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SupplyDigital Components

Austria . 6,426 parts In-Stock

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Corphita

USA . 3,314 parts In-Stock

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Problanco Electronics

Mexico . 2,527 parts In-Stock

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TANS Electronics

Latvia . 2,107 parts In-Stock

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Kulean Microsystems

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Corohmni

South Africa . 226 parts In-Stock

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Kepictronics

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UHIMA Technologies

Türkiye . 5 parts In-Stock

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Overview

Capture every moment with the MT9V022I77ATC by Onsemi, a high-quality image sensor designed to deliver exceptional performance. Manufactured by Onsemi, a trusted name in the industry, this sensor is perfect for a wide range of applications. With its advanced technology and superior design, this product offers incredible value, benefits, and advantages to customers looking for top-notch image sensors. Upgrade your imaging experience with the MT9V022I77ATC and unlock a world of possibilities.

Feature Benefit Bullets

Pixel Size (um): 6X6

Smaller pixel size allows for higher resolution images to be captured with greater detail.

Maximum Supply Voltage: 3.6 V

Higher maximum supply voltage ensures stable operation and reliability.

Master Clock: 26.6 MHz

High master clock frequency enables fast data processing and high-speed image capture.

Body Width: 9 inch

Compact body width makes the sensor suitable for integration into various devices and systems.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors offer low power consumption and high sensitivity, making them ideal for imaging applications.

Body Height: 1.3 mm

Low body height allows for slim and compact camera designs.

Package Shape or Style: SQUARE

Square package shape provides easy integration and placement within devices.

Minimum Supply Voltage: 3 V

Low minimum supply voltage helps in reducing power consumption and extending battery life.

Maximum Operating Temperature: 85 °C

Wide operating temperature range ensures the sensor can perform in various environmental conditions.

Horizontal Pixel: 752

High horizontal pixel count results in high-resolution images with detailed clarity.

Output Range: -9-9mA

Wide output range allows for capturing images with a broad range of light intensity.

Output Type: DIGITAL CURRENT

Digital current output simplifies the interface with external devices and systems.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature range ensures the sensor can function in cold environments.

Maximum Operating Current: 60 mA

Moderate operating current ensures efficient power usage without compromising performance.

Dynamic Range: 54.4 dB

High dynamic range allows the sensor to capture scenes with both bright and dark areas accurately.

Vertical Pixel: 480

High vertical pixel count contributes to the overall image resolution and quality.

Body Length/Diameter: 9 mm

Compact body length/diameter enables easy integration into space-constrained designs.

Optical Format (inch): 1/3

Common optical format ensures compatibility with a wide range of lenses and camera systems.

Termination Type: SOLDER

Solder termination provides a secure and reliable connection for installation and operation.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies connectivity and communication with other components in the system.

Frame Rate: 60 fps

High frame rate allows the sensor to capture fast-moving subjects with smooth motion.

Array Type: FRAME

Frame array type enables the sensor to capture complete images in a single frame.

Mounting Feature: SURFACE MOUNT

Surface mount capability allows for easy and secure installation on PCBs and other surfaces.

Technical Specifications

Image Sensors MT9V022I77ATC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 3-3.60 V, IT ALSO HAVE DYNAMIC RANGE 80DB-100DB IN HIDY MODE

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.3 mm

Body Length/Diameter:

9 mm

Dynamic Range:

54.4 dB

Frame Rate:

60 fps

Horizontal Pixel:

752

Master Clock:

26.6 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

6X6

Sensors or Transducers Type:

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Termination Type:

SOLDER

Vertical Pixel:

480

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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