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MT9V034C12STM-DR1

Onsemi

MT9V034C12STM-DR1 by Onsemi

Onsemi's MT9V034C12STM-DR1 image sensor features 6x6 um pixel size, 27 MHz master clock, and 752x480 resolution. Ideal for applications requiring high sensitivity (4.8 V/lx.s) and a wide dynamic range of 100 dB. Suitable for surface mounting in various imaging systems.

Median Price

$20.220

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 430 parts In-Stock

1+ parts

$20.220

100+ parts

$15.931

1k+ parts

$14.900

10k+ parts

-

430

$20.220

$15.931

$14.900

-

Distributors (In-Stock)

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Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$15.780

100+ parts

-

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150

$15.780

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Digiode

USA . 134 parts In-Stock

1+ parts

$19.209

100+ parts

-

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134

$19.209

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Vyrian

USA . 8,186 parts In-Stock

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8,186

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Flip Electronics

USA . 608 parts In-Stock

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-

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608

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 386 parts In-Stock

1+ parts

$2.880

100+ parts

-

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-

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386

$2.880

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Corohmni

South Africa . 57 parts In-Stock

1+ parts

$15.155

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-

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57

$15.155

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Advanced Electronics

New Zealand . 870 parts In-Stock

1+ parts

$15.462

100+ parts

$15.462

1k+ parts

$15.462

10k+ parts

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870

$15.462

$15.462

$15.462

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Continental Prestige Electronics

USA . 2,556 parts In-Stock

1+ parts

$15.780

100+ parts

-

1k+ parts

-

10k+ parts

$15.464

2,556

$15.780

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-

$15.464

AZTECH Wire

Italy . 198 parts In-Stock

1+ parts

$16.555

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-

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198

$16.555

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Ampacity Inc.

Singapore . 225 parts In-Stock

1+ parts

$17.190

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225

$17.190

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Semicontronic

India . 52 parts In-Stock

1+ parts

$17.190

100+ parts

$16.760

1k+ parts

$16.674

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52

$17.190

$16.760

$16.674

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Corphita

USA . 1,747 parts In-Stock

1+ parts

$18.198

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1,747

$18.198

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Kulean Microsystems

USA . 4,662 parts In-Stock

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4,662

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Problanco Electronics

Mexico . 4,406 parts In-Stock

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TANS Electronics

Latvia . 4,219 parts In-Stock

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Argo Parts USA

USA . 3,987 parts In-Stock

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SupplyDigital Components

Austria . 2,414 parts In-Stock

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2,414

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UHIMA Technologies

Türkiye . 496 parts In-Stock

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496

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Perfect Parts

USA . 340 parts In-Stock

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340

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Netroflash

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$15.464

1k+ parts

$14.991

10k+ parts

$14.675

100

-

$15.464

$14.991

$14.675

Overview

Upgrade your imaging solutions with the MT9V034C12STM-DR1 image sensor from Onsemi. Known for its high quality and reliability, Onsemi is a trusted manufacturer in the industry. This image sensor offers unparalleled performance, making it ideal for a wide range of applications. From security cameras to industrial automation, this sensor delivers exceptional value with its advanced features and capabilities. Take your imaging projects to the next level with the MT9V034C12STM-DR1 and experience the difference that Onsemi can make.

Feature Benefit Bullets

Pixel Size (um): 6X6

The small pixel size allows for high resolution images to be captured with great detail.

Maximum Supply Voltage: 3.6 V

The high maximum supply voltage provides flexibility in power options for different applications.

Master Clock: 27 MHz

The high master clock frequency enables fast data readout and processing.

Body Width: 11.43 inch

The compact body width makes this sensor easy to integrate into various systems.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

The CMOS image sensor type offers low power consumption and high-quality image output.

Body Height: 2.3 mm

The low body height allows for thin and compact device designs.

Package Shape or Style: SQUARE

The square package shape facilitates easy assembly and placement within a system.

Minimum Supply Voltage: 3 V

The low minimum supply voltage ensures efficient power usage.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature allows for reliable performance in various environments.

Horizontal Pixel: 752

The high number of horizontal pixels contributes to increased image sharpness and clarity.

Output Range: -11-11mA

The wide output range accommodates different lighting conditions for accurate image capture.

Output Type: DIGITAL CURRENT

The digital current output ensures compatibility with modern digital systems.

Minimum Operating Temperature: -30 °C

The low minimum operating temperature allows for use in cold environments without performance degradation.

Maximum Operating Current: 60 mA

The moderate maximum operating current ensures efficient power usage.

Housing: CERAMIC

The ceramic housing provides durability and protection for the sensor components.

Dynamic Range: 100 dB

The high dynamic range allows the sensor to capture details in both bright and dark areas of an image.

Vertical Pixel: 480

The vertical pixel count contributes to the overall image resolution and quality.

Body Length/Diameter: 11.43 mm

The small body length/diameter facilitates easy integration and placement within a device.

Optical Format (inch): 1/3

The 1/3 inch optical format is a common size in imaging devices, allowing for compatibility with existing systems.

Termination Type: SOLDER

The solder termination type ensures secure and reliable connections with other components.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface simplifies the connection of the sensor to other devices for data transfer.

Frame Rate: 60 fps

The high frame rate enables smooth and fluid motion capture in videos and fast-moving scenes.

Array Type: FRAME

The frame array type allows for simultaneous capture of multiple pixels, improving overall image quality and speed.

Sensitivity (V/lx.s): 4.8 V/lx.s

The high sensitivity rating ensures that the sensor can capture images in low light conditions with minimal noise.

Mounting Feature: SURFACE MOUNT

The surface mounting feature simplifies the integration of the sensor into PCBs and other electronic systems.

Technical Specifications

Image Sensors MT9V034C12STM-DR1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

DUAL OUTPUT

Array Type:

FRAME

Body Width:

11.43 inch

Body Height:

2.3 mm

Body Length/Diameter:

11.43 mm

Dynamic Range:

100 dB

Frame Rate:

60 fps

Horizontal Pixel:

752

Housing:

CERAMIC

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

6X6

Sensitivity (V/lx.s):

4.8 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Termination Type:

SOLDER

Vertical Pixel:

480

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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