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KAI-08050-AAA-JR-BA

Onsemi

KAI-08050-AAA-JR-BA by Onsemi

KAI-08050-AAA-JR-BA by Onsemi is an image sensor with 5.5x5.5 um pixel size, 15.5V max supply voltage, and 3296 horizontal pixels. Ideal for applications requiring a CCD image sensor with a dynamic range of 64 dB, such as industrial machine vision systems or medical imaging devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,167 parts In-Stock

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Digiode

USA . 993 parts In-Stock

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Kulean Microsystems

USA . 6,867 parts In-Stock

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Problanco Electronics

Mexico . 4,280 parts In-Stock

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Corphita

USA . 2,478 parts In-Stock

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TANS Electronics

Latvia . 1,264 parts In-Stock

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SupplyDigital Components

Austria . 962 parts In-Stock

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Corohmni

South Africa . 498 parts In-Stock

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UHIMA Technologies

Türkiye . 101 parts In-Stock

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Overview

Elevate your imaging experience with the KAI-08050-AAA-JR-BA by Onsemi. As a leading manufacturer in image sensors, Onsemi guarantees top-notch quality and innovative technology in every product. Designed for a wide range of applications, this image sensor offers unparalleled value and benefits to customers seeking high-resolution images with exceptional clarity and detail. Experience the advantages of Onsemi's superior craftsmanship and elevate your projects to new heights with the KAI-08050-AAA-JR-BA.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

Smaller pixel size allows for higher resolution images to be captured, making this image sensor suitable for applications requiring fine details.

Maximum Supply Voltage: 15.5 V

Higher maximum supply voltage provides flexibility in power input options and ensures stable operation under varying power conditions.

Power Supplies (V): 15

Standard power supply voltage of 15V makes it compatible with common power sources and easy to integrate into existing systems.

Minimum Supply Voltage: 14.5 V

Low minimum supply voltage requirement ensures efficient power usage and allows for operation in lower power environments.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD image sensor technology provides high-quality image capture with low noise, making it suitable for high-performance imaging applications.

Body Height: 3.33 mm

Compact body height allows for easy integration into space-constrained devices or systems.

Package Shape or Style: RECTANGULAR

Rectangular package shape simplifies mounting and facilitates alignment in assembly processes.

Maximum Operating Temperature: 70 °C

Wide operating temperature range ensures reliable performance in various environmental conditions.

Minimum Operating Temperature: -50 °C

Wide temperature range allows for operation in extreme cold environments without compromising performance.

Dynamic Range: 64 dB

High dynamic range allows for accurate capture of both bright and dark areas in an image, enhancing overall image quality.

Vertical Pixel: 2472

High vertical pixel count enables capturing detailed images with sharp vertical resolution.

Array Type: INTERLINE

Interline CCD array type provides fast readout speeds and reduces image lag, making it suitable for high-speed imaging applications.

Technical Specifications

Image Sensors KAI-08050-AAA-JR-BA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 34 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Height:

3.33 mm

Body Length/Diameter:

40 mm

Dynamic Range:

64 dB

Horizontal Pixel:

3296

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

4/3

Output Type:

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Power Supplies (V):

15

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

2472

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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