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AR0330CS1C12SPKA0-CP

Onsemi

AR0330CS1C12SPKA0-CP by Onsemi

The Onsemi AR0330CS1C12SPKA0-CP is a 1/3 inch CMOS image sensor with 2304x1296 pixels. It operates at 27 MHz with a dynamic range of 69.5 dB and outputs digital voltage from 0.40-1.40V. Ideal for applications requiring high-resolution imaging and fast frame rates up to 60 fps, it features a compact square package suitable for surface mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Flip Electronics

USA . 18,000 parts In-Stock

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Vyrian

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Digiode

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Native Components

USA . 389 parts In-Stock

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$9.062

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Northwest PG Solutions

USA . 197 parts In-Stock

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$9.968

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$8.971

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AZTECH Wire

Italy . 897 parts In-Stock

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$19.520

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Authorized Procurement Solutions

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SupplyDigital Components

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Epart123

USA . 4,000 parts In-Stock

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TANS Electronics

Latvia . 3,967 parts In-Stock

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Corphita

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Kulean Microsystems

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Problanco Electronics

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Corohmni

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UHIMA Technologies

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Overview

Capture every moment in stunning clarity with the AR0330CS1C12SPKA0-CP image sensor by Onsemi. As a leader in the industry, Onsemi delivers top-quality products that guarantee exceptional performance and reliability. This image sensor is perfect for a wide range of applications, from security cameras to automotive systems. Experience the value and benefits of this cutting-edge technology, providing you with crisp images and precise details that will exceed your expectations. Trust Onsemi to deliver superior quality and innovation with the AR0330CS1C12SPKA0-CP image sensor.

Feature Benefit Bullets

Pixel Size (um): 2.20X2.20

Smaller pixel size allows for higher resolution images to be captured, making this image sensor ideal for applications requiring detailed images.

Maximum Supply Voltage: 1.9 V

Higher maximum supply voltage ensures stable operation and helps in achieving reliable performance of the image sensor.

Master Clock: 27 MHz

High master clock frequency enables fast data processing and readout of the image sensor, making it suitable for real-time applications.

Body Width: 11.43 inch

Compact body width allows for easy integration of the image sensor into various devices without taking up much space.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS technology ensures low power consumption and high-quality image output, making this image sensor a popular choice in digital imaging applications.

Body Height: 2.275 mm

Low body height enables the image sensor to be used in slim devices without compromising on performance.

Package Shape or Style: SQUARE

Square package shape is more convenient for handling and mounting the image sensor, making it suitable for automated assembly processes.

Minimum Supply Voltage: 1.7 V

Lower minimum supply voltage helps in reducing power consumption and enables energy-efficient operation of the image sensor.

Horizontal Pixel: 2304

High horizontal pixel count results in detailed and high-resolution images, making this image sensor suitable for applications requiring precise image capture.

Output Range: 0.40-1.40V

Wide output voltage range allows for flexibility in signal processing and compatibility with a variety of interface circuits.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies signal processing and enhances compatibility with digital systems, making this image sensor easy to integrate into various applications.

Terminal Finish: TIN SILVER COPPER

Tin, silver, and copper terminal finish provides good conductivity and corrosion resistance, ensuring reliable electrical connections.

Maximum Operating Current: 137 mA

Low maximum operating current helps in reducing power consumption and heat dissipation, making this image sensor energy-efficient and suitable for portable devices.

Housing: CERAMIC

Ceramic housing offers durability and thermal stability, protecting the image sensor from external environmental factors and ensuring long-term reliability.

Dynamic Range: 69.5 dB

High dynamic range allows the image sensor to capture a wide range of light intensities, resulting in clear and detailed images with accurate color reproduction.

Vertical Pixel: 1296

Vertical pixel count contributes to the overall resolution of the image sensor, enabling it to capture detailed images with good image quality.

Body Length/Diameter: 11.43 mm

Compact body length/diameter facilitates easy integration of the image sensor into various devices, making it suitable for compact and slim designs.

Optical Format (inch): 1/3

1/3 inch optical format is a commonly used standard in image sensors, ensuring compatibility with a wide range of optical systems and lenses.

Termination Type: SOLDER

Solder termination provides a reliable and secure connection for the image sensor, ensuring stable operation and preventing signal loss.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies connectivity and communication with external devices, enabling easy integration of the image sensor into existing systems.

Frame Rate: 60 fps

High frame rate allows for smooth and real-time image capture, making this image sensor suitable for applications requiring fast image processing.

Array Type: FRAME

Frame array type enables simultaneous capture of multiple image frames, facilitating high-speed image processing and enhancing the overall performance of the image sensor.

Mounting Feature: SURFACE MOUNT

Surface mounting feature simplifies the installation and integration of the image sensor onto circuit boards, making it suitable for automated assembly processes.

Technical Specifications

Image Sensors AR0330CS1C12SPKA0-CP attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.7-2.9V, CSP PACKAGE ALSO AVAILABLE

Array Type:

FRAME

Body Width:

11.43 inch

Body Height:

2.275 mm

Body Length/Diameter:

11.43 mm

Dynamic Range:

69.5 dB

Frame Rate:

60 fps

Horizontal Pixel:

2304

Housing:

CERAMIC

JESD-609 Code:

e1

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

137 mA

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

2.20X2.20

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

TIN SILVER COPPER

Termination Type:

SOLDER

Vertical Pixel:

1296

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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