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KAI-01150-CBA-JD-AE

Onsemi

KAI-01150-CBA-JD-AE by Onsemi

The Onsemi KAI-01150-CBA-JD-AE is a 5.5x5.5 um CCD image sensor with 1280H x 720V pixels, offering a dynamic range of 64 dB. It operates b/w -50 to 70 °C and requires a supply voltage of 14.5-15.5 V. Ideal for applications requiring digital voltage output in an optical format of 1/2 inch, such as industrial imaging systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

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1k+

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Digiode

USA . 1,607 parts In-Stock

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Vyrian

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TANS Electronics

Latvia . 5,806 parts In-Stock

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Kulean Microsystems

USA . 4,681 parts In-Stock

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Problanco Electronics

Mexico . 3,891 parts In-Stock

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Corphita

USA . 1,956 parts In-Stock

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SupplyDigital Components

Austria . 1,216 parts In-Stock

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Corohmni

South Africa . 314 parts In-Stock

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UHIMA Technologies

Türkiye . 95 parts In-Stock

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Overview

Unlock a world of crystal-clear imaging with the KAI-01150-CBA-JD-AE by Onsemi. As a leading manufacturer in image sensors, Onsemi delivers superior quality and reliability. This CCD image sensor boasts an impressive pixel size and wide dynamic range, making it perfect for applications such as surveillance cameras, machine vision systems, and medical imaging equipment. Experience unparalleled clarity and precision with the KAI-01150-CBA-JD-AE, providing exceptional value and performance for all your imaging needs.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

Smaller pixel size allows for higher resolution images to be captured with more details.

Maximum Supply Voltage: 15.5 V

Higher maximum supply voltage allows for better performance and flexibility in powering the image sensor.

Body Width: 20.07 inch

Wide body width allows for more surface area for capturing light and producing high-quality images.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD image sensors are known for their high-quality image capture and low noise performance.

Body Height: 3.33 mm

Low body height allows for easy integration into compact electronic devices.

Package Shape or Style: RECTANGULAR

Rectangular package shape provides a standardized form factor for easy mounting and integration.

Minimum Supply Voltage: 14.5 V

Higher minimum supply voltage ensures stable and consistent power supply for optimal performance.

Maximum Operating Temperature: 70 °C

High maximum operating temperature allows for use in a wide range of environments without risk of overheating.

Horizontal Pixel: 1280

High horizontal pixel count provides sharp and detailed images with excellent clarity.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies the integration process and provides compatibility with various digital systems.

Minimum Operating Temperature: -50 °C

Low minimum operating temperature ensures the image sensor can function even in extreme cold conditions.

Dynamic Range: 64 dB

High dynamic range allows for capturing a wide range of light intensities with great accuracy and detail.

Vertical Pixel: 720

Vertical pixel count complements the horizontal pixels for capturing high-resolution images in both dimensions.

Body Length/Diameter: 33.02 mm

Medium body length provides a good balance between compactness and capturing capabilities.

Optical Format (inch): 1/2

Standard 1/2 inch optical format offers compatibility with various lenses and optical systems for versatility.

Termination Type: SOLDER

Solder termination provides a reliable and secure connection for stable performance and durability.

Array Type: INTERLINE

Interline array type offers fast readout speeds and efficient image processing for quick and accurate results.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature simplifies the installation process and ensures secure attachment for stable operation.

Technical Specifications

Image Sensors KAI-01150-CBA-JD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

INTERLINE

Body Width:

20.07 inch

Body Height:

3.33 mm

Body Length/Diameter:

33.02 mm

Dynamic Range:

64 dB

Horizontal Pixel:

1280

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

1/2

Output Type:

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

720

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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