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AS0260HQSC28SUKA0-CR

Onsemi

AS0260HQSC28SUKA0-CR by Onsemi

AS0260HQSC28SUKA0-CR by Onsemi is a CMOS image sensor with 1920x1080 resolution, 1.4um pixel size, and 65dB dynamic range. It operates at -30 to 70 °C, outputs digital voltage from 0.40-1.50V, and has a frame rate of 120fps. Ideal for applications requiring high-quality imaging in compact devices like smartphones and tablets.

Median Price

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Lifecycle Status

Suppliers In-Stock

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In-Stock Inventory

< 1k

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Digiode

USA . 695 parts In-Stock

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695

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Vyrian

USA . 226 parts In-Stock

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Kulean Microsystems

USA . 5,744 parts In-Stock

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Problanco Electronics

Mexico . 4,475 parts In-Stock

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Northwest PG Solutions

USA . 1,999 parts In-Stock

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TANS Electronics

Latvia . 1,440 parts In-Stock

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Corphita

USA . 1,201 parts In-Stock

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SupplyDigital Components

Austria . 1,101 parts In-Stock

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Native Components

USA . 870 parts In-Stock

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Corohmni

South Africa . 343 parts In-Stock

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UHIMA Technologies

Türkiye . 189 parts In-Stock

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Overview

Capture every moment with the AS0260HQSC28SUKA0-CR Image Sensor by Onsemi. Known for their top-notch quality and cutting-edge technology, Onsemi brings you a sensor that exceeds expectations in performance and reliability. Ideal for applications such as surveillance systems, automotive cameras, and industrial imaging, this sensor delivers crystal-clear images with exceptional detail and clarity. Elevate your projects with the value and benefits that only Onsemi can provide.

Feature Benefit Bullets

Pixel Size (um): 1.4X1.4

Smaller pixel size allows for higher resolution and sharper images.

Maximum Supply Voltage: 1.95 V

Higher supply voltage allows for better performance and faster operation.

Master Clock: 54 MHz

High master clock frequency enables quick data processing and image capture.

Body Width: 4.158 inch

Compact body width makes it suitable for various applications including smartphones and drones.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensors are known for low power consumption and high image quality.

Package Shape or Style: RECTANGULAR

Rectangular package shape allows for easy integration and placement within devices.

Minimum Supply Voltage: 1.7 V

Lower minimum supply voltage can help in saving power and increasing battery life.

Maximum Operating Temperature: 70 °C

Wide operating temperature range ensures reliability in various environmental conditions.

Horizontal Pixel: 1920

High horizontal pixel count results in detailed and high-resolution images.

Output Range: 0.40-1.50V

Wide output voltage range allows for flexibility in different applications.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies integration and processing of image data.

Minimum Operating Temperature: -30 °C

Low minimum operating temperature ensures functionality even in extreme cold conditions.

Housing: PLASTIC

Plastic housing provides lightweight and durable protection for the sensor.

Dynamic Range: 65 dB

High dynamic range allows for capturing both bright and dark details in images.

Vertical Pixel: 1080

Vertical pixel count contributes to the overall resolution and clarity of images.

Body Length/Diameter: 6.005 mm

Compact body size enables easy integration into small devices.

Optical Format (inch): 1/6

Optical format size is suitable for applications where space is limited.

Termination Type: SOLDER

Solder termination provides secure connection and reliability in circuit assembly.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies communication with other devices for data transfer.

Frame Rate: 120 fps

High frame rate enables capturing fast-moving objects and smooth video recording.

Array Type: FRAME

Frame array type allows for capturing multiple images simultaneously for improved performance.

Sensitivity (V/lx.s): 0.64 V/lx.s

High sensitivity ensures good performance in low light conditions and improved image quality.

Mounting Feature: SURFACE MOUNT

Surface mount capability makes it easy to mount the sensor on PCBs for various applications.

Technical Specifications

Image Sensors AS0260HQSC28SUKA0-CR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER; IT ALSO OPERATES AT 2.8 V NOMINAL ANALOG SUPPLY VOLTAGE

Array Type:

FRAME

Body Width:

4.158 inch

Body Height:

.71 mm

Body Length/Diameter:

6.005 mm

Dynamic Range:

65 dB

Frame Rate:

120 fps

Horizontal Pixel:

1920

Housing:

PLASTIC

JESD-609 Code:

e1

Master Clock:

54 MHz

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/6

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

1.4X1.4

Sensitivity (V/lx.s):

.64 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

1080

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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