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MT9V126IA3XTC-DR

Onsemi

MT9V126IA3XTC-DR by Onsemi

MT9V126IA3XTC-DR by Onsemi is an image sensor with 5.60x5.60 um pixel size, 27 MHz master clock, and 1/4 inch optical format. It operates b/w -40 to 105 °C and has a dynamic range of 74.6 dB. Ideal for applications requiring a digital voltage output interface, such as frame arrays in cameras with a frame rate of 30 fps.

Median Price

$19.900

Lifecycle Status

EOL

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,575 parts In-Stock

1+ parts

$19.900

100+ parts

$15.111

1k+ parts

$13.980

10k+ parts

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2,575

$19.900

$15.111

$13.980

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,006 parts In-Stock

1+ parts

$21.736

100+ parts

-

1k+ parts

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1,006

$21.736

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Vyrian

USA . 529 parts In-Stock

1+ parts

$22.880

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529

$22.880

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Chip Stock

USA . 4,100 parts In-Stock

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4,100

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Distributors (Availability)

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Corphita

USA . 1,668 parts In-Stock

1+ parts

$20.592

100+ parts

-

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1,668

$20.592

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Corohmni

South Africa . 315 parts In-Stock

1+ parts

$22.880

100+ parts

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315

$22.880

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

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TANS Electronics

Latvia . 4,529 parts In-Stock

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4,529

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SupplyDigital Components

Austria . 3,752 parts In-Stock

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3,752

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Futuretech Components

Singapore . 2,300 parts In-Stock

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2,300

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Problanco Electronics

Mexico . 1,443 parts In-Stock

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1,443

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Kulean Microsystems

USA . 972 parts In-Stock

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972

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UHIMA Technologies

Türkiye . 233 parts In-Stock

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233

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Overview

Capture stunning images with the Onsemi MT9V126IA3XTC-DR Image Sensor. As a trusted manufacturer, Onsemi delivers top-quality products that exceed expectations. Ideal for a wide range of applications, this image sensor provides unparalleled performance and reliability. Unlock endless possibilities and elevate your projects with the value, benefits, and advantages that the MT9V126IA3XTC-DR offers. Experience superior image quality and efficiency like never before.

Feature Benefit Bullets

Pixel Size (um): 5.60X5.60

The small pixel size ensures high image resolution and sharpness, making this product ideal for capturing detailed images.

Maximum Supply Voltage: 1.9 V

This allows for efficient power usage and compatibility with a variety of power sources.

Master Clock: 27 MHz

The high master clock frequency enables fast data processing and high-speed image capture.

Body Width: 9 inch

The compact body width allows for easy integration into various devices and systems.

Power Supplies (V): 1.8

The low power supply voltage ensures energy efficiency and helps prolong the product's lifespan.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

The CMOS image sensor type offers low power consumption, high sensitivity, and excellent image quality.

Body Height: 1.4 mm

The slim body height makes this sensor suitable for applications where space is limited.

Package Shape or Style: SQUARE

The square package shape provides easy handling and mounting options for the sensor.

Minimum Supply Voltage: 1.7 V

This low minimum supply voltage ensures operational stability and flexibility in power supply options.

Maximum Operating Temperature: 105 °C

The high maximum operating temperature range allows for reliable performance in various environmental conditions.

Horizontal Pixel: 680

The high horizontal pixel count results in wide image coverage and detailed image capture.

Output Range: -0.30-2.80V

The wide output range allows for versatile signal processing and compatibility with different systems.

Output Type: DIGITAL VOLTAGE

The digital voltage output type ensures accurate and reliable data transmission for image processing.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature range ensures reliable performance even in extreme cold environments.

Terminal Finish: TIN SILVER COPPER

The terminal finish provides excellent conductivity and durability for long-lasting performance.

Maximum Operating Current: 50 mA

The low operating current requirement ensures energy efficiency and reduces power consumption.

Dynamic Range: 74.6 dB

The high dynamic range allows for capturing a wide range of light intensities and producing high-quality images with fine details.

Vertical Pixel: 512

The vertical pixel count offers excellent image resolution and clarity for vertical image capture.

Body Length/Diameter: 9 mm

The compact body length/diameter makes this sensor easy to integrate into various devices and systems.

Optical Format (inch): 1/4

The 1/4 optical format offers flexibility in lens selection and compatibility with various optical systems.

Termination Type: SOLDER

The solder termination type ensures secure connections and reliable signal transmission for image data.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface type allows for easy connectivity and communication with other devices for data transfer.

Frame Rate: 30 fps

The high frame rate enables smooth and seamless image capture for video recording and fast-moving subjects.

Array Type: FRAME

The frame array type offers efficient image capture and processing capabilities for various applications.

Mounting Feature: SURFACE MOUNT

The surface mounting feature provides easy installation and secure attachment to circuit boards or other surfaces.

Technical Specifications

Image Sensors MT9V126IA3XTC-DR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.66-2.94 V

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.4 mm

Body Length/Diameter:

9 mm

Dynamic Range:

74.6 dB

Frame Rate:

30 fps

Horizontal Pixel:

680

JESD-609 Code:

e1

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

50 mA

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

5.60X5.60

Power Supplies (V):

1.8

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

TIN SILVER COPPER

Termination Type:

SOLDER

Vertical Pixel:

512

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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