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AR1335CSSC11SMD20

Onsemi

AR1335CSSC11SMD20 by Onsemi

Onsemi's AR1335CSSC11SMD20 is a 1/3.2-inch CMOS image sensor with 4208x3120 pixels, offering a pixel size of 1.1μm and a max supply voltage of 1.3V. With a master clock of 48MHz, it provides digital voltage output via a 2-wire interface, making it ideal for applications requiring high-resolution imaging at up to 30fps.

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AR1335CSSC11SMD20 by Onsemi
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Kulean Microsystems

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Problanco Electronics

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SupplyDigital Components

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Northwest PG Solutions

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Corphita

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Overview

Capture the world in stunning clarity with the AR1335CSSC11SMD20 image sensor by Onsemi. Renowned for their exceptional quality and precision engineering, Onsemi delivers cutting-edge technology that exceeds industry standards. Ideal for a wide range of applications, this image sensor offers unparalleled value and performance. Elevate your projects with the superior dynamic range, high frame rate, and optimal pixel size this sensor provides. Trust Onsemi to bring your vision to life with the AR1335CSSC11SMD20 image sensor.

Feature Benefit Bullets

Pixel Size (um): 1.1

The small pixel size allows for high resolution images with fine details, making this image sensor suitable for capturing sharp and clear pictures.

Maximum Supply Voltage: 1.3 V

The low maximum supply voltage ensures energy efficiency and reduces the risk of damage due to high voltage, making this product safe to use.

Master Clock: 48 MHz

The high master clock speed enables fast data processing and image capture, resulting in smooth and real-time performance.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensors are known for their low power consumption and high sensitivity, making them a popular choice for various imaging applications.

Horizontal Pixel: 4208

The high horizontal pixel count provides greater image detail and clarity, perfect for applications where precise image reproduction is required.

Output Range: -0.05-1.3V

The wide output range ensures accurate representation of image data with minimal signal distortion, resulting in high quality output.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies signal processing and integration with other digital systems, making this image sensor easy to use in various applications.

Maximum Operating Current: 130 mA

The low maximum operating current contributes to energy efficiency and prolongs the product's lifespan, making it a reliable choice for long-term use.

Dynamic Range: 69 dB

The high dynamic range allows the sensor to capture a wide range of light intensities, ensuring accurate and detailed images even in challenging lighting conditions.

Vertical Pixel: 3120

The vertical pixel count contributes to the overall image resolution and quality, offering clear and sharp images with detailed information.

Optical Format (inch): 1/3.2

The optical format is suitable for compact camera designs, making this image sensor ideal for applications where space constraints are a concern.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface simplifies connectivity and communication with other systems, allowing for easy integration and operation in a variety of setups.

Frame Rate: 30 fps

The high frame rate enables smooth and real-time video capture, making this image sensor suitable for applications where fast moving objects need to be captured accurately.

Array Type: FULL FRAME

The full frame array type ensures uniform image quality across the entire frame, providing consistent results and reducing the need for post-processing adjustments.

Technical Specifications

Image Sensors AR1335CSSC11SMD20 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

FULL FRAME

Dynamic Range:

69 dB

Frame Rate:

30 fps

Horizontal Pixel:

4208

Master Clock:

48 MHz

Maximum Operating Current:

130 mA

Optical Format (inch):

1/3.2

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Pixel Size (um):

1.1

Sensors or Transducers Type:

Maximum Supply Voltage:

1.3 V

Vertical Pixel:

3120

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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