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AR1335CSSC32SMD10

Onsemi

AR1335CSSC32SMD10 by Onsemi

Onsemi's AR1335CSSC32SMD10 is a 1/3.2-inch CMOS image sensor with 4208x3120 pixels, offering a pixel size of 1.1μm. It operates at a max supply voltage of 1.3V and features a master clock of 48MHz. Ideal for applications requiring high-resolution imaging with a frame rate of up to 30fps and a dynamic range of 69dB.

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2

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Vyrian

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Digiode

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Native Components

USA . 253 parts In-Stock

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$0.312

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Northwest PG Solutions

USA . 414 parts In-Stock

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AZTECH Wire

Italy . 672 parts In-Stock

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Problanco Electronics

Mexico . 5,863 parts In-Stock

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TANS Electronics

Latvia . 5,596 parts In-Stock

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SupplyDigital Components

Austria . 5,116 parts In-Stock

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Corphita

USA . 2,428 parts In-Stock

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UHIMA Technologies

Türkiye . 572 parts In-Stock

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Corohmni

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Kulean Microsystems

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Overview

Capture every moment with the AR1335CSSC32SMD10 image sensor by Onsemi. Known for their superior quality and cutting-edge technology, Onsemi delivers exceptional performance in the field of image sensors. Ideal for applications requiring high resolution and fast frame rates, this sensor offers customers uncompromised image quality and reliability. Whether you're designing a security camera, industrial machine vision system, or drone, the AR1335CSSC32SMD10 provides the value, benefits, and advantages needed to bring your project to life. Trust Onsemi to elevate your imaging solutions to the next level.

Feature Benefit Bullets

Pixel Size (um): 1.1

The small pixel size of 1.1um allows for high resolution and detail in images captured by this image sensor.

Maximum Supply Voltage: 1.3 V

The maximum supply voltage of 1.3V ensures stable and efficient operation of the image sensor.

Master Clock: 48 MHz

With a high master clock of 48MHz, this image sensor can process data quickly and efficiently.

Sensor Type: IMAGE SENSOR, CMOS

Being a CMOS image sensor, it offers low power consumption and high performance, making it a reliable choice for imaging applications.

Minimum Supply Voltage: 1.14 V

The minimum supply voltage of 1.14V ensures that the image sensor can operate efficiently even at lower power levels.

Horizontal Pixel: 4208

With a high horizontal pixel count of 4208, this image sensor can capture detailed and crisp images with high resolution.

Output Range: -0.05-1.3V

The wide output range allows for flexibility in signal processing and compatibility with a variety of systems.

Output Type: DIGITAL VOLTAGE

The digital voltage output simplifies signal processing and integration with digital systems.

Maximum Operating Current: 130 mA

The low maximum operating current of 130mA ensures efficient power usage and less heat generation during operation.

Dynamic Range: 69 dB

The high dynamic range of 69dB allows the image sensor to capture a wide range of light intensities, resulting in high-quality images with good contrast.

Vertical Pixel: 3120

With a vertical pixel count of 3120, this image sensor can capture images with high vertical resolution and detail.

Optical Format (inch): 1/3.2

The optical format of 1/3.2 inch provides compatibility with various lenses and optical systems, allowing for versatile use in different applications.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface simplifies connectivity and communication with external devices, making integration into systems easier.

Frame Rate: 30 fps

With a frame rate of 30 frames per second, this image sensor can capture smooth and motion blur-free video footage, making it suitable for dynamic imaging applications.

Array Type: FULL FRAME

The full-frame array type ensures that all pixels are utilized, resulting in high-quality and uniform image capture across the entire sensor area.

Technical Specifications

Image Sensors AR1335CSSC32SMD10 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT ANALOG VOLTAGE 2.6-2.9 V

Array Type:

FULL FRAME

Dynamic Range:

69 dB

Frame Rate:

30 fps

Horizontal Pixel:

4208

Master Clock:

48 MHz

Maximum Operating Current:

130 mA

Optical Format (inch):

1/3.2

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Pixel Size (um):

1.1

Sensors or Transducers Type:

Maximum Supply Voltage:

1.3 V

Minimum Supply Voltage:

1.14 V

Vertical Pixel:

3120

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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