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AR1335HSSC11SMAA0-DRBR

Onsemi

AR1335HSSC11SMAA0-DRBR by Onsemi

Onsemi's AR1335HSSC11SMAA0-DRBR is a 1/3.2" CMOS image sensor with 4208x3120 pixels, offering a 69 dB dynamic range and operating at 48 MHz. It has a digital voltage output interface, suitable for applications requiring high-resolution imaging in devices like smartphones and surveillance cameras.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,167 parts In-Stock

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Digiode

USA . 622 parts In-Stock

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SupplyDigital Components

Austria . 6,125 parts In-Stock

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Kulean Microsystems

USA . 2,857 parts In-Stock

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Corphita

USA . 1,393 parts In-Stock

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Problanco Electronics

Mexico . 1,316 parts In-Stock

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Northwest PG Solutions

USA . 1,220 parts In-Stock

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Native Components

USA . 920 parts In-Stock

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UHIMA Technologies

Türkiye . 591 parts In-Stock

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TANS Electronics

Latvia . 223 parts In-Stock

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Corohmni

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Overview

Capture every moment in stunning clarity with the AR1335HSSC11SMAA0-DRBR image sensor by Onsemi. As a leader in the industry, Onsemi ensures top-quality products that deliver exceptional performance and reliability. Ideal for a wide range of applications, this image sensor offers unparalleled value, providing customers with crisp, high-resolution images and a dynamic range of 69 dB. Elevate your imaging experience with the AR1335HSSC11SMAA0-DRBR and see the world in a whole new light.

Feature Benefit Bullets

Pixel Size (um): 1.1

The small pixel size of 1.1um allows for high resolution and sharp images to be captured with this image sensor.

Maximum Supply Voltage: 1.3 V

Operates efficiently with a maximum supply voltage of 1.3V, ensuring low power consumption and stable performance.

Master Clock: 48 MHz

The high master clock frequency of 48MHz enables fast data processing and high-speed image capture.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

Being a CMOS image sensor, it offers low power consumption, high sensitivity, and good noise performance, making it suitable for various imaging applications.

Dynamic Range: 69 dB

The wide dynamic range of 69dB allows the sensor to capture details in both bright and dark areas of the image, ensuring high-quality output.

Technical Specifications

Image Sensors AR1335HSSC11SMAA0-DRBR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

MECHANICAL SHUTTER; IT ALSO OPERATES AT ANALOG VOLTAGE OF 2.6 V TO 2.9 V

Array Type:

FULL FRAME

Body Width:

10 inch

Body Height:

1.325 mm

Body Length/Diameter:

10 mm

Dynamic Range:

69 dB

Frame Rate:

30 fps

Horizontal Pixel:

4208

Housing:

CERAMIC

Master Clock:

48 MHz

Mounting Feature:

Optical Format (inch):

1/3.2

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

1.1

Sensors or Transducers Type:

Maximum Supply Voltage:

1.3 V

Minimum Supply Voltage:

1.14 V

Termination Type:

SOLDER

Vertical Pixel:

3120

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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