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KAI-01150-CBA-JD-BA

Onsemi

KAI-01150-CBA-JD-BA by Onsemi

KAI-01150-CBA-JD-BA by Onsemi is an image sensor with 1280x720 pixels, 5.5um pixel size, and 64dB dynamic range. It operates b/w -50 to 70 °C and has a supply voltage range of 14.5V to 15.5V. Ideal for applications requiring high-resolution imaging in various environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Vyrian

USA . 517 parts In-Stock

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Digiode

USA . 167 parts In-Stock

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TANS Electronics

Latvia . 5,000 parts In-Stock

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Kulean Microsystems

USA . 4,223 parts In-Stock

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Corphita

USA . 1,920 parts In-Stock

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Problanco Electronics

Mexico . 1,215 parts In-Stock

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SupplyDigital Components

Austria . 836 parts In-Stock

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Corohmni

South Africa . 199 parts In-Stock

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UHIMA Technologies

Türkiye . 188 parts In-Stock

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Overview

Experience the unparalleled quality and precision of the KAI-01150-CBA-JD-BA by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-of-the-line image sensors known for their reliability and performance. This versatile product is ideal for a wide range of applications, offering customers unmatched value and benefits. From capturing stunning images to enhancing surveillance systems, the KAI-01150-CBA-JD-BA is designed to meet your needs with ease. Elevate your projects with this cutting-edge image sensor today.

Feature Benefit Bullets

Pixel Size (um) : 5.5X5.5

This small pixel size allows for high resolution images to be captured with clarity and detail.

Maximum Supply Voltage : 15.5 V

With a high maximum supply voltage, this sensor can handle power fluctuations without risking damage.

Body Width : 20.07 inch

The large body width provides stability and durability to the sensor, ensuring it can withstand rugged conditions.

Power Supplies (V) : 15

The standard power supply voltage of 15V makes it compatible with most existing systems.

Sensors or Transducers Type : IMAGE SENSOR,CCD

A CCD image sensor type ensures high-quality image capture with accurate colors and low noise.

Body Height : 3.33 mm

The slim body height allows for easy integration into devices with limited space.

Package Shape or Style : RECTANGULAR

The rectangular shape of the package makes it easy to mount and align within a device.

Minimum Supply Voltage : 14.5 V

The low minimum supply voltage ensures that the sensor can operate efficiently even in low power situations.

Maximum Operating Temperature : 70 °C

With a high maximum operating temperature, this sensor can be used in various environments without overheating.

Horizontal Pixel : 1280

The high number of horizontal pixels allows for wide and detailed image capture.

Output Type : DIGITAL VOLTAGE

Digital voltage output ensures easy integration with digital processing systems for quick and accurate image analysis.

Minimum Operating Temperature : -50 °C

With a low minimum operating temperature, this sensor can function in freezing conditions without any issues.

Dynamic Range : 64 dB

A high dynamic range of 64 dB ensures that both bright and dark areas in an image are well-balanced and detailed.

Vertical Pixel : 720

The vertical pixel count of 720 provides sufficient resolution for capturing detailed images.

Body Length/Diameter : 33.02 mm

The compact body length/diameter makes this sensor easy to retrofit into existing devices or systems.

Optical Format (inch) : 1/2

The 1/2 inch optical format allows for compatibility with common lenses and accessories for image enhancement.

Termination Type : SOLDER

The solder termination type ensures a secure and reliable connection for long-term use.

Array Type : INTERLINE

The interline array type enables fast readout speeds and minimizes image distortion for accurate results.

Mounting Feature : THROUGH HOLE MOUNT

The through hole mount feature simplifies the installation process and provides stability during operation.

Technical Specifications

Image Sensors KAI-01150-CBA-JD-BA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

INTERLINE

Body Width:

20.07 inch

Body Height:

3.33 mm

Body Length/Diameter:

33.02 mm

Dynamic Range:

64 dB

Horizontal Pixel:

1280

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

1/2

Output Type:

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Power Supplies (V):

15

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

720

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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