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MT9P031I12STM-DR

Onsemi

MT9P031I12STM-DR by Onsemi

Onsemi's MT9P031I12STM-DR is a 2.2x2.2 um CMOS image sensor with 2592 (H) x 1944 (V) pixels, offering a max supply voltage of 1.9V and operating temperature range from -30 to 70 °C. Ideal for applications requiring a digital output interface, this sensor provides a dynamic range of 70.1 dB and operates at a frame rate of 14 fps.

Median Price

$14.711

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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DigiKey

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Flip Electronics

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Cyclops Electronics Ltd

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Digiode

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Nova Conductors

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AZTECH Wire

Italy . 284 parts In-Stock

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Ampacity Inc.

Singapore . 20 parts In-Stock

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Perfect Parts

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Kulean Microsystems

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Continental Prestige Electronics

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SupplyDigital Components

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GreenTree Electronics

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Argo Parts USA

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Problanco Electronics

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TANS Electronics

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Authorized Procurement Solutions

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S.R.D Solutions

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Futuretech Components

Singapore . 1,980 parts In-Stock

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Corphita

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UHIMA Technologies

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Corohmni

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Bastille Electronics

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Overview

Capture every moment with the MT9P031I12STM-DR image sensor by Onsemi. Known for their top-quality products, Onsemi has created a cutting-edge sensor that is versatile and reliable. Ideal for applications in security cameras, automotive cameras, and industrial imaging, this sensor offers a wide range of benefits such as high sensitivity and an impressive dynamic range. With the MT9P031I12STM-DR, customers can expect crystal-clear images and exceptional performance, making it the perfect choice for all their imaging needs.

Feature Benefit Bullets

Pixel Size (um): 2.2X2.2

Smaller pixel size allows for higher resolution and better image quality.

Maximum Supply Voltage: 1.9 V

Allows for efficient power usage and extends the lifespan of the product.

Master Clock: 96 MHz

High master clock speed enables fast data processing and quick capture of images.

Body Width: 10 inch

Compact body width makes it suitable for various applications and easy to integrate into devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS technology provides high-quality images with low power consumption, making it a reliable choice.

Minimum Supply Voltage: 1.7 V

Allows for flexibility in power supply requirements while still maintaining optimal performance.

Maximum Operating Temperature: 70 °C

Wide operating temperature range ensures the sensor can be used in various environments.

Horizontal Pixel: 2592

High horizontal pixel count enables detailed and sharp images to be captured.

Output Range: 0.35-2.30V

Wide output range provides flexibility in signal processing and compatibility with different systems.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies signal processing and integration with digital devices.

Minimum Operating Temperature: -30 °C

Low minimum operating temperature allows for reliable performance in cold conditions.

Maximum Operating Current: 35 mA

Low operating current ensures efficient power consumption and extends battery life.

Dynamic Range: 70.1 dB

High dynamic range allows for capturing images with a wide range of light intensities.

Vertical Pixel: 1944

High vertical pixel count ensures detailed and clear images in both horizontal and vertical dimensions.

Body Length/Diameter: 10 mm

Compact body length makes it suitable for small devices and easy to mount.

Optical Format (inch): 1/2.5

Standard optical format ensures compatibility with various lenses and optical systems.

Termination Type: SOLDER

Solder termination provides secure and reliable connections for long-lasting performance.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies connectivity and communication with other devices.

Frame Rate: 14 fps

Decent frame rate allows for smooth video recording and fast image capture.

Array Type: FRAME

Frame array type provides structured image processing and data organization.

Sensitivity (V/lx.s): 1.4 V/lx.s

High sensitivity ensures clear and bright images even in low-light conditions.

Mounting Feature: SURFACE MOUNT

Surface mount feature allows for easy and secure installation on PCBs or other surfaces.

Technical Specifications

Image Sensors MT9P031I12STM-DR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER; IT ALSO OPERATES AT 2.8 V ANALOG NOMINAL SUPPLY VOLTAGE

Array Type:

FRAME

Body Width:

10 inch

Body Height:

1.25 mm

Body Length/Diameter:

10 mm

Dynamic Range:

70.1 dB

Frame Rate:

14 fps

Horizontal Pixel:

2592

Master Clock:

96 MHz

Mounting Feature:

Maximum Operating Current:

35 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/2.5

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

2.2X2.2

Sensitivity (V/lx.s):

1.4 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

1944

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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