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MT9P031I12STM-TP

Onsemi

MT9P031I12STM-TP by Onsemi

MT9P031I12STM-TP by Onsemi is a 2.2x2.2um CMOS image sensor with 2592H x 1944V resolution, operating at 48MHz clock speed. It offers a dynamic range of 70.1dB and outputs digital voltage in the range of 0.16-1.82V, suitable for applications requiring high-quality imaging such as surveillance cameras and industrial machine vision systems.

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5

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1k+

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Vyrian

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Digiode

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Nova Conductors

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Ampacity Inc.

Singapore . 1,704 parts In-Stock

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Advanced Electronics

New Zealand . 100 parts In-Stock

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AZTECH Wire

Italy . 1,165 parts In-Stock

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S.R.D Solutions

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Continental Prestige Electronics

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Kulean Microsystems

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Argo Parts USA

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Overview

Capture every moment in stunning detail with the MT9P031I12STM-TP Image Sensor by Onsemi. As a leading manufacturer of high-quality imaging solutions, Onsemi delivers exceptional performance and reliability. Ideal for a wide range of applications, this sensor offers unparalleled value with its crisp image quality, low power consumption, and versatile output interface. Elevate your products with the advanced technology of the MT9P031I12STM-TP, setting new standards in imaging excellence.

Feature Benefit Bullets

Pixel Size (um) 2.2X2.2

Smaller pixel size allows for higher resolution images with more detail.

Maximum Supply Voltage 1.9 V

Allows for efficient power consumption while still providing the necessary voltage for optimal performance.

Master Clock 48 MHz

High master clock speed enables faster data processing and improved overall performance.

Sensors or Transducers Type IMAGE SENSOR,CMOS

CMOS technology offers low power consumption, high speed, and good image quality, making it a reliable choice for image sensors.

Package Shape or Style SQUARE

Square shape allows for easier integration into various devices and PCB layouts.

Minimum Supply Voltage 1.7 V

Low minimum supply voltage helps in reducing power consumption and extending battery life.

Horizontal Pixel 2592

High horizontal pixel count results in detailed and high-resolution images.

Output Range 0.16-1.82V

Wide output range allows for capturing images in different lighting conditions with accurate color representation.

Output Type DIGITAL VOLTAGE

Digital output simplifies data processing and transmission, providing ease of integration into digital systems.

Maximum Operating Current 35 mA

Low operating current ensures efficient power usage and reduced heat generation.

Dynamic Range 70.1 dB

High dynamic range allows for capturing images with a wide range of brightness levels, avoiding overexposed or underexposed areas.

Vertical Pixel 1944

High vertical pixel count contributes to the overall image quality and sharpness of the captured images.

Optical Format (inch) 1/2.5

Common optical format size for image sensors, allowing compatibility with various lenses and optical systems.

Termination Type SOLDER

Solder termination provides a reliable and secure connection, ensuring stable performance over time.

Output Interface Type 2-WIRE INTERFACE

2-wire interface simplifies communication and data transfer between the image sensor and other components in the system.

Frame Rate 14 fps

Decent frame rate suitable for capturing still images and slow-motion video recording.

Array Type SINGLE FRAME

Single frame array simplifies image processing and data handling, making it easier to work with the captured images.

Mounting Feature SURFACE MOUNT

Surface mount design allows for easy and secure integration into electronic devices, saving space and ensuring a reliable connection.

Technical Specifications

Image Sensors MT9P031I12STM-TP attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT 2.60-3.10 V ANALOG SUPPLY VOLATGE

Array Type:

SINGLE FRAME

Dynamic Range:

70.1 dB

Frame Rate:

14 fps

Horizontal Pixel:

2592

Master Clock:

48 MHz

Mounting Feature:

Maximum Operating Current:

35 mA

Optical Format (inch):

1/2.5

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

2.2X2.2

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

1944

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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