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MT9P031I12STC-DP

Onsemi

MT9P031I12STC-DP by Onsemi

MT9P031I12STC-DP by Onsemi is an image sensor with 2.2x2.2 um pixel size, 96 MHz master clock, and 70.1 dB dynamic range. Ideal for applications requiring a square CMOS image sensor with a digital voltage output interface and frame array type at temperatures ranging from -30 to 70 °C.

Median Price

$20.025

Lifecycle Status

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8

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1k+

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USA . 2,400 parts In-Stock

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Nova Conductors

Japan . 72 parts In-Stock

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Vyrian

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Digiode

USA . 234 parts In-Stock

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Martec Srl

Italy . 50 parts In-Stock

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ComSIT Distribution GmbH

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 78 parts In-Stock

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$2.070

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

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$2.085

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$1.980

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$2.085

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Modulus Dynamics

Lithuania . 2,289 parts In-Stock

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$2.479

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$2.479

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AZTECH Wire

Italy . 274 parts In-Stock

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$10.270

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Ampacity Inc.

Singapore . 2,350 parts In-Stock

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$18.750

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Corohmni

South Africa . 246 parts In-Stock

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Continental Prestige Electronics

USA . 5,439 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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Semicontronic

India . 1,998 parts In-Stock

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$36.750

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$35.831

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$35.648

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S.R.D Solutions

India . 30,000 parts In-Stock

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Lixinc

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Perfect Parts

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TANS Electronics

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Futuretech Components

Singapore . 4,800 parts In-Stock

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Problanco Electronics

Mexico . 3,864 parts In-Stock

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Argo Parts USA

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Kulean Microsystems

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Corphita

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SupplyDigital Components

Austria . 307 parts In-Stock

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UHIMA Technologies

Türkiye . 225 parts In-Stock

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GreenTree Electronics

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Overview

Capture every moment in stunning detail with the MT9P031I12STC-DP Image Sensor by Onsemi. Boasting a high-quality CMOS sensor and advanced digital voltage output, this square-shaped sensor delivers crystal-clear images with a dynamic range of 70.1 dB. Perfect for a wide range of applications, from security cameras to industrial imaging, this sensor offers unparalleled value and performance. Trust Onsemi's reputation for reliability and innovation, and take your imaging projects to the next level with the MT9P031I12STC-DP.

Feature Benefit Bullets

Pixel Size (um):

2.2X2.2 - Small pixel size allows for high resolution images to be captured, making this sensor suitable for applications requiring detailed image quality.

Maximum Supply Voltage:

1.9 V - Operating within a low maximum supply voltage range helps in reducing power consumption, making this sensor energy-efficient.

Master Clock:

96 MHz - The high master clock frequency enables fast image processing and data transfer, making this sensor ideal for real-time imaging applications.

Body Width:

10 inch - The compact body width of the sensor allows for easy integration into various devices and systems, offering flexibility in design.

Sensors or Transducers Type:

IMAGE SENSOR,CMOS - Being a CMOS image sensor, it provides low noise operation and high sensitivity, ensuring high-quality images in various lighting conditions.

Body Height:

1.25 mm - The slim body height of the sensor makes it suitable for applications where thin profile devices are required.

Package Shape or Style:

SQUARE - The square package shape provides a symmetrical layout for easy mounting and alignment in devices, ensuring a stable and secure fit.

Minimum Supply Voltage:

1.7 V - Operating at a low minimum supply voltage ensures compatibility with a wide range of power sources, enhancing the sensor's versatility.

Maximum Operating Temperature:

70 °C - With a high maximum operating temperature range, this sensor can withstand harsh environmental conditions, making it reliable for outdoor use.

Horizontal Pixel:

2592 - The high horizontal pixel count allows for detailed and sharp image capture, making this sensor suitable for high-resolution imaging applications.

Output Range:

0.60-2.30V - The wide output range provides flexibility in signal processing and compatibility with various types of systems, enhancing the sensor's usability.

Output Type:

DIGITAL VOLTAGE - The digital voltage output simplifies signal processing and integration with digital systems, making this sensor easy to use and interface with other components.

Minimum Operating Temperature:

30 °C - Operating at a low minimum temperature range ensures reliable performance in cold environments, making this sensor suitable for outdoor and industrial applications.

Maximum Operating Current:

35 mA - With a low maximum operating current, this sensor consumes minimal power, contributing to energy efficiency and prolonged battery life.

Dynamic Range:

70.1 dB - The high dynamic range allows for capturing images with a wide range of brightness levels, ensuring accurate and detailed image reproduction.

Vertical Pixel:

1944 - The high vertical pixel count complements the horizontal resolution, enabling the sensor to capture high-quality images with excellent clarity and sharpness.

Body Length/Diameter:

10 mm - The compact body length/diameter size of the sensor contributes to its versatility and ease of integration into various devices and systems.

Optical Format (inch):

1/2.5 - The optical format specification provides compatibility with a wide range of lenses, offering flexibility in choosing optics for different imaging needs.

Termination Type:

SOLDER - The solder termination type enables secure and reliable connections, ensuring stable operation and durability in various environmental conditions.

Output Interface Type:

2-WIRE INTERFACE - The 2-wire interface simplifies communication and connectivity with external systems, making this sensor easy to integrate into existing setups.

Frame Rate:

14 fps - With a moderate frame rate, this sensor is suitable for applications requiring real-time or near-real-time imaging capabilities.

Array Type:

FRAME - The frame array type facilitates simultaneous capture of multiple pixels, enabling fast and efficient image processing, making this sensor suitable for dynamic imaging applications.

Mounting Feature:

SURFACE MOUNT - The surface mounting feature allows for easy and secure installation on PCBs, ensuring stable operation and reliability in various applications.

Technical Specifications

Image Sensors MT9P031I12STC-DP attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, GLOBAL RESET RELEASE, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.6-3.1V

Array Type:

FRAME

Body Width:

10 inch

Body Height:

1.25 mm

Body Length/Diameter:

10 mm

Dynamic Range:

70.1 dB

Frame Rate:

14 fps

Horizontal Pixel:

2592

Master Clock:

96 MHz

Mounting Feature:

Maximum Operating Current:

35 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/2.5

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

2.2X2.2

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

1944

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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