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MT9V128IA3XTC-TR

Onsemi

MT9V128IA3XTC-TR by Onsemi

MT9V128IA3XTC-TR by Onsemi is a 5.6x5.6 um CMOS image sensor with 680H x 512V pixels, offering a dynamic range of 74.8 dB and operating at up to 105°C. Ideal for applications requiring a digital voltage output interface, such as frame arrays in need of high-speed imaging at 60 fps.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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EBV Elektronik

Germany . 2,000 parts In-Stock

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2,000

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Vyrian

USA . 5,182 parts In-Stock

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5,182

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Digiode

USA . 2,310 parts In-Stock

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2,310

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Nova Conductors

Japan . 550 parts In-Stock

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550

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Semicontronic

India . 1,761 parts In-Stock

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$8.750

100+ parts

$8.531

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$8.488

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1,761

$8.750

$8.531

$8.488

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AZTECH Wire

Italy . 733 parts In-Stock

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$16.630

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733

$16.630

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Ampacity Inc.

Singapore . 1,830 parts In-Stock

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$17.750

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$17.750

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Continental Prestige Electronics

USA . 6,919 parts In-Stock

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SupplyDigital Components

Austria . 5,270 parts In-Stock

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5,270

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Kulean Microsystems

USA . 4,228 parts In-Stock

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Problanco Electronics

Mexico . 3,748 parts In-Stock

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TANS Electronics

Latvia . 2,619 parts In-Stock

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Argo Parts USA

USA . 1,516 parts In-Stock

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Corphita

USA . 352 parts In-Stock

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Corohmni

South Africa . 259 parts In-Stock

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UHIMA Technologies

Türkiye . 224 parts In-Stock

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224

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Bastille Electronics

Australia . 120 parts In-Stock

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120

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Overview

Capture vivid images with the MT9V128IA3XTC-TR image sensor by Onsemi. Known for their top-notch quality and reliable performance, Onsemi delivers cutting-edge technology in the field of image sensors. This innovative product offers a wide range of applications in various industries, providing customers with unparalleled value and benefits. Upgrade your imaging systems with the MT9V128IA3XTC-TR and experience exceptional clarity and precision like never before.

Feature Benefit Bullets

Pixel Size (um): 5.6X5.6

The small pixel size allows for high resolution image capture, making it ideal for applications requiring detailed images.

Maximum Supply Voltage: 1.9 V

The higher supply voltage provides ample power for optimal sensor performance, ensuring reliable operation.

Master Clock: 27 MHz

The fast master clock enables quick data processing and high speed image capture, making it suitable for real-time applications.

Body Width: 9 inch

The compact body width allows for easy integration into various devices or systems, saving space and simplifying installation.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

The CMOS image sensor technology offers low power consumption and high sensitivity, making it a cost-effective and efficient choice.

Body Height: 1.4 mm

The slim body height helps with flexibility in design and allows for the sensor to be incorporated into thin devices or systems seamlessly.

Package Shape or Style: SQUARE

The square package shape provides uniformity in mounting and alignment, ensuring easy integration and compatibility with standard mounting mechanisms.

Minimum Supply Voltage: 1.7 V

The low minimum supply voltage allows for energy-efficient operation, making it suitable for battery-powered devices or portable applications.

Maximum Operating Temperature: 105 °C

The high operating temperature range ensures reliable performance in various environmental conditions, making it suitable for diverse applications.

Horizontal Pixel: 680

The high horizontal pixel count enables wide image capture, providing ample detail and resolution for demanding imaging tasks.

Output Type: DIGITAL VOLTAGE

The digital voltage output simplifies signal processing and transmission, ensuring accurate and reliable data transfer for further analysis or display.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures functionality in extreme cold environments, making it suitable for outdoor or industrial applications.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

The multi-metal terminal finish provides durability and conductivity for secure connections, ensuring long-term reliability and performance.

Maximum Operating Current: 50 mA

The low operating current ensures energy efficiency and minimal power consumption, making it suitable for battery-powered devices or applications with power constraints.

Dynamic Range: 74.8 dB

The high dynamic range allows for accurate image capture in various lighting conditions, ensuring clear and detailed images in both bright and low-light environments.

Vertical Pixel: 512

The vertical pixel count offers balanced image resolution and aspect ratio, ideal for applications requiring square or portrait-oriented images.

Body Length/Diameter: 9 mm

The compact body length or diameter allows for versatile mounting options and easy integration into space-constrained devices or systems.

Optical Format (inch): 1/4

The 1/4 inch optical format is a standard size for many imaging applications, ensuring compatibility with various lenses and accessories for customization.

Termination Type: SOLDER

The solder termination type provides secure and permanent connections, ensuring stable performance and reliability in harsh operating conditions.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface simplifies communication and integration with other devices or systems, allowing for easy data transfer and control.

Frame Rate: 60 fps

The high frame rate enables smooth and fluid video capture, ensuring clear and sharp images in fast-moving scenes or dynamic environments.

Array Type: FRAME

The frame array type allows for simultaneous capture of multiple pixels, enabling rapid image acquisition for applications requiring quick processing or analysis.

Mounting Feature: SURFACE MOUNT

The surface mounting feature simplifies installation and assembly, ensuring easy integration into electronic circuit boards or devices without additional hardware.

Technical Specifications

Image Sensors MT9V128IA3XTC-TR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.4 mm

Body Length/Diameter:

9 mm

Dynamic Range:

74.8 dB

Frame Rate:

60 fps

Horizontal Pixel:

680

JESD-609 Code:

e1

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

50 mA

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

5.6X5.6

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

512

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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