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NOIS1SM1000A-HHC

Onsemi

NOIS1SM1000A-HHC by Onsemi

NOIS1SM1000A-HHC by Onsemi is a 1024x1024 CMOS image sensor with 15x15 um pixel size. Operating temperature ranges from -40 to 85 °C, with analog voltage output and 11 fps frame rate. Ideal for applications requiring high-resolution imaging in a compact square package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 8,952 parts In-Stock

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Digiode

USA . 1,071 parts In-Stock

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AZTECH Wire

Italy . 235 parts In-Stock

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$12.500

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Kulean Microsystems

USA . 4,116 parts In-Stock

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Problanco Electronics

Mexico . 4,108 parts In-Stock

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TANS Electronics

Latvia . 3,151 parts In-Stock

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SupplyDigital Components

Austria . 2,583 parts In-Stock

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Corphita

USA . 713 parts In-Stock

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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UHIMA Technologies

Türkiye . 232 parts In-Stock

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Corohmni

South Africa . 56 parts In-Stock

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Overview

Unlock the power of high-quality imaging with the NOIS1SM1000A-HHC by Onsemi. Manufactured by a trusted leader in the industry, this image sensor delivers unparalleled performance and reliability for a wide range of applications. From security cameras to industrial automation, this cutting-edge technology offers customers exceptional value, benefits, and advantages. Experience crystal-clear images and seamless integration with the NOIS1SM1000A-HHC, setting a new standard in image sensor excellence.

Feature Benefit Bullets

Pixel Size (um): 15X15

The small pixel size ensures high resolution and sharp image quality.

Body Width: 29.21 inch

The wide body width allows for easy installation and stability.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensor technology provides high-quality images with low power consumption.

Body Height: 4.17 mm

The compact body height makes it suitable for applications where space is limited.

Package Shape or Style: SQUARE

The square package shape is easy to mount and offers efficient use of space.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature allows for use in a variety of environments.

Horizontal Pixel: 1024

The high number of horizontal pixels results in detailed and high-resolution images.

Output Type: ANALOG VOLTAGE

Analog voltage output provides compatibility with a wide range of systems.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures reliable performance in cold conditions.

Terminal Finish: Matte Tin (Sn)

The matte tin terminal finish provides a durable and reliable connection.

Maximum Operating Current: 60.8 mA

The low operating current ensures energy efficiency and prolonged battery life.

Housing: CERAMIC

Ceramic housing offers durability and heat resistance for long-term use.

Vertical Pixel: 1024

The high number of vertical pixels enhances image clarity and detail.

Body Length/Diameter: 29.21 mm

The compact body length/diameter makes it easy to integrate into various designs.

Termination Type: SOLDER

Solder termination provides a secure and reliable connection for long-term use.

Frame Rate: 11 fps

The fast frame rate ensures smooth video capture and motion detection.

Array Type: FRAME

The frame array type offers efficient image capture and processing capabilities.

Mounting Feature: SURFACE MOUNT

Surface mounting feature allows for easy and secure installation in various applications.

Technical Specifications

Image Sensors NOIS1SM1000A-HHC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

FRAME

Body Width:

29.21 inch

Body Height:

4.17 mm

Body Length/Diameter:

29.21 mm

Frame Rate:

11 fps

Horizontal Pixel:

1024

Housing:

CERAMIC

JESD-609 Code:

e3

Mounting Feature:

Maximum Operating Current:

60.8 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1

Output Type:

Package Shape or Style:

Pixel Size (um):

15X15

Sensors or Transducers Type:

Terminal Finish:

Matte Tin (Sn)

Termination Type:

SOLDER

Vertical Pixel:

1024

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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