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NOIS1SM0250S-HHC

Onsemi

NOIS1SM0250S-HHC by Onsemi

NOIS1SM0250S-HHC by Onsemi is a 25x25 um CMOS image sensor with 512x512 pixels, offering an 8 MHz master clock and 74 dB dynamic range. Ideal for applications requiring high-resolution imaging at up to 29 fps, it operates b/w 0-65 °C temperature range and outputs analog voltage in the range of 1-4.25V.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 4,220 parts In-Stock

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Digiode

USA . 1,267 parts In-Stock

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AZTECH Wire

Italy . 829 parts In-Stock

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$16.020

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829

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TANS Electronics

Latvia . 6,655 parts In-Stock

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SupplyDigital Components

Austria . 5,811 parts In-Stock

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Kulean Microsystems

USA . 3,403 parts In-Stock

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Corphita

USA . 1,856 parts In-Stock

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Problanco Electronics

Mexico . 1,259 parts In-Stock

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Corohmni

South Africa . 380 parts In-Stock

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UHIMA Technologies

Türkiye . 362 parts In-Stock

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Overview

Discover a new world of high-quality imaging with the NOIS1SM0250S-HHC by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch performance and reliability in their Image Sensors category. This innovative product offers unparalleled value with its wide range of applications, from security systems to medical imaging. Experience the benefits of crystal-clear images and precise data output, all while enjoying the advantages of cutting-edge technology. Elevate your projects with the NOIS1SM0250S-HHC and see the difference for yourself.

Feature Benefit Bullets

Pixel Size (um): 25X25

Smaller pixel size provides higher resolution and better image quality.

Master Clock: 8 MHz

High master clock frequency allows for faster data processing and image capturing.

Body Width: 29.2 inch

Compact body width makes it suitable for integration into small-sized devices.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

CMOS image sensor technology offers low power consumption and high sensitivity.

Body Height: 17.77 mm

Low body height enables easy integration into slim electronic devices.

Package Shape or Style: SQUARE

Square package shape improves ease of mounting and alignment during assembly.

Maximum Operating Temperature: 65 °C

High maximum operating temperature allows for reliable performance in various environments.

Horizontal Pixel: 512

High horizontal pixel count results in detailed and clear image capture.

Output Range: 1-4.25V

Wide output voltage range provides flexibility for different applications.

Output Type: ANALOG VOLTAGE

Analog voltage output simplifies interface with other electronic circuits.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature ensures reliable performance even in cold conditions.

Terminal Finish: Matte Tin (Sn)

Matte tin terminal finish offers good solderability and corrosion resistance.

Housing: ALUMINIUM

Aluminum housing provides durability and efficient heat dissipation.

Dynamic Range: 74 dB

High dynamic range results in accurate and detailed image capture in varying light conditions.

Vertical Pixel: 512

High vertical pixel count contributes to overall image sharpness and clarity.

Body Length/Diameter: 29.2 mm

Compact body length/diameter facilitates installation in space-constrained devices.

Data Rate: 8 Mbps

High data rate enables rapid transfer of image data for processing and storage.

Termination Type: SOLDER

Solder termination type ensures secure and reliable electrical connections.

Frame Rate: 29 fps

High frame rate allows for smooth and fluid video recording and playback.

Array Type: FRAME

Frame array type enables organized and efficient image capture and processing.

Mounting Feature: SURFACE MOUNT

Surface mounting feature simplifies assembly and integration into electronic devices.

Technical Specifications

Image Sensors NOIS1SM0250S-HHC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

FRAME

Body Width:

29.2 inch

Body Height:

17.77 mm

Body Length/Diameter:

29.2 mm

Data Rate:

8 Mbps

Dynamic Range:

74 dB

Frame Rate:

29 fps

Horizontal Pixel:

512

Housing:

ALUMINIUM

JESD-609 Code:

e3

Master Clock:

8 MHz

Mounting Feature:

Maximum Operating Temperature:

65 Cel

Minimum Operating Temperature:

0 Cel

Optical Format (inch):

1

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

25X25

Sensors or Transducers Type:

Terminal Finish:

Matte Tin (Sn)

Termination Type:

SOLDER

Vertical Pixel:

512

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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