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NOIS1SM0250A-WWC

Onsemi

NOIS1SM0250A-WWC by Onsemi

NOIS1SM0250A-WWC by Onsemi is a 25x25 um CMOS image sensor with 512x512 pixels. It operates b/w 0-65 °C, has an 8 MHz master clock, and offers a dynamic range of 74 dB. Ideal for applications requiring high-resolution imaging at up to 29 fps with an output range of 1-4.25V.

Median Price

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Lifecycle Status

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Vyrian

USA . 1,969 parts In-Stock

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Digiode

USA . 1,628 parts In-Stock

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TANS Electronics

Latvia . 8,347 parts In-Stock

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Kulean Microsystems

USA . 7,155 parts In-Stock

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Problanco Electronics

Mexico . 5,838 parts In-Stock

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SupplyDigital Components

Austria . 2,463 parts In-Stock

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Corphita

USA . 1,898 parts In-Stock

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UHIMA Technologies

Türkiye . 737 parts In-Stock

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Corohmni

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Overview

Experience the next level of imaging performance with the NOIS1SM0250A-WWC by Onsemi. As a trusted manufacturer in the industry, Onsemi brings you cutting-edge Image Sensors that offer unparalleled quality and reliability. Ideal for a wide range of applications, this sensor provides crystal-clear imaging capabilities that exceed expectations. Enhance your projects with this versatile sensor that delivers exceptional value, benefits, and advantages to customers looking for top-of-the-line image sensor technology. Elevate your imaging experience with Onsemi's NOIS1SM0250A-WWC.

Feature Benefit Bullets

Pixel Size (um) 25X25

The small pixel size allows for high resolution images to be captured, making this sensor ideal for applications requiring detailed imaging.

Master Clock 8 MHz

The fast master clock ensures quick and efficient operation of the sensor, enabling high-speed data processing and image capture.

Sensors or Transducers Type IMAGE SENSOR,CMOS

CMOS image sensors are known for their low power consumption, high sensitivity, and excellent image quality, making this sensor a reliable choice for imaging applications.

Maximum Operating Temperature 65 °C

The wide operating temperature range allows this sensor to be used in various environmental conditions without the risk of overheating, ensuring reliability and durability.

Horizontal Pixel 512

The high number of horizontal pixels enables the sensor to capture wide and detailed images, making it suitable for applications requiring panoramic or large-scale imaging.

Output Range 1-4.25V

The wide output range provides flexibility in signal processing and compatibility with a variety of digital and analog systems, making this sensor versatile and easy to integrate.

Output Type ANALOG VOLTAGE

Analog voltage output simplifies signal processing and integration with analog circuits, making this sensor user-friendly and suitable for a wide range of applications.

Minimum Operating Temperature 0 °C

The low minimum operating temperature allows this sensor to be used in cold environments without compromising performance, making it reliable for outdoor and industrial applications.

Dynamic Range 74 dB

The high dynamic range ensures accurate and detailed image capture in both bright and low-light conditions, making this sensor suitable for a wide range of lighting environments.

Vertical Pixel 512

The high number of vertical pixels enables the sensor to capture detailed and high-resolution images, making it suitable for applications requiring precise and accurate imaging.

Data Rate 8 Mbps

The high data rate allows for quick and efficient transfer of image data, enabling real-time image processing and high-speed imaging applications.

Frame Rate 29 fps

The high frame rate ensures smooth and continuous image capture, making this sensor suitable for applications requiring fast-moving or dynamic imaging.

Array Type FRAME

The frame array type simplifies the sensor's configuration and integration, making it easy to use and suitable for a variety of imaging applications.

Technical Specifications

Image Sensors NOIS1SM0250A-WWC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

FRAME

Data Rate:

8 Mbps

Dynamic Range:

74 dB

Frame Rate:

29 fps

Horizontal Pixel:

512

Master Clock:

8 MHz

Maximum Operating Temperature:

65 Cel

Minimum Operating Temperature:

0 Cel

Optical Format (inch):

1

Output Range:

Output Type:

Pixel Size (um):

25X25

Sensors or Transducers Type:

Vertical Pixel:

512

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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