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MT9V125IA7XTC-DR

Onsemi

MT9V125IA7XTC-DR by Onsemi

MT9V125IA7XTC-DR by Onsemi is a 640x480 CMOS image sensor with 5.60um pixel size and 71.7dB dynamic range. It operates at -40 to 85 °C, has a max supply voltage of 3.1V, and uses a digital current output interface. Ideal for applications requiring high-quality imaging in compact devices like smartphones and surveillance cameras.

Median Price

$10.270

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3 parts In-Stock

1+ parts

-

100+ parts

$10.270

1k+ parts

$9.190

10k+ parts

$8.650

3

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$10.270

$9.190

$8.650

Distributors (In-Stock)

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Digiode

USA . 97 parts In-Stock

1+ parts

$10.868

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97

$10.868

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Vyrian

USA . 7,266 parts In-Stock

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7,266

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Distributors (Availability)

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Corphita

USA . 529 parts In-Stock

1+ parts

$10.296

100+ parts

-

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529

$10.296

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Corohmni

South Africa . 348 parts In-Stock

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$11.440

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348

$11.440

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AZTECH Wire

Italy . 81 parts In-Stock

1+ parts

$20.640

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81

$20.640

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TANS Electronics

Latvia . 3,014 parts In-Stock

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SupplyDigital Components

Austria . 2,162 parts In-Stock

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Kulean Microsystems

USA . 1,107 parts In-Stock

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Problanco Electronics

Mexico . 298 parts In-Stock

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UHIMA Technologies

Türkiye . 186 parts In-Stock

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Overview

Capture the world in stunning detail with the Onsemi MT9V125IA7XTC-DR Image Sensor. Renowned for their high-quality products, Onsemi delivers top-notch performance and reliability. Perfect for a wide range of applications, this sensor offers unparalleled value with its exceptional image quality, low power consumption, and compact design. Whether you're designing a security camera, barcode scanner, or smartphone camera, the MT9V125IA7XTC-DR will elevate your product to the next level. Trust Onsemi to bring your vision to life with cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Pixel Size (um): 5.60X5.60

The smaller pixel size allows for high resolution images to be captured with greater detail.

Maximum Supply Voltage: 3.1 V

Allows for reliable operation within a safe voltage range.

Master Clock: 27 MHz

Provides a fast clock speed for efficient image capture and processing.

Body Width: 9 inch

Compact size makes it suitable for various applications where space is limited.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors offer low power consumption and high sensitivity, making them ideal for imaging applications.

Body Height: 1.3 mm

Slim profile allows for easy integration into devices without adding bulk.

Package Shape or Style: SQUARE

Square package shape provides stability and ease of mounting.

Minimum Supply Voltage: 2.5 V

Allows for flexibility in power supply options while still maintaining functionality.

Maximum Operating Temperature: 85 °C

Can operate reliably in high temperature environments without overheating.

Horizontal Pixel: 640

High horizontal pixel count means higher image resolution and clarity.

Output Range: 15.90-26.50mA

Provides a reliable output current range for efficient data transfer.

Output Type: DIGITAL CURRENT

Digital current output ensures accurate and reliable data transmission.

Minimum Operating Temperature: -40 °C

Can operate in very low temperature conditions without performance issues.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

Provides a durable and corrosion-resistant finish for long-lasting performance.

Maximum Operating Current: 55 mA

Can handle high operating currents without overheating or malfunctioning.

Dynamic Range: 71.7 dB

Wide dynamic range allows for capturing images with varying light intensities.

Vertical Pixel: 480

High vertical pixel count enhances image quality and resolution.

Body Length/Diameter: 9 mm

Compact body size for easy integration into devices.

Optical Format (inch): 1/4

1/4 inch optical format provides a good balance between size and image quality.

Termination Type: SOLDER

Solder termination ensures secure and reliable connections for long-term use.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface for easy connectivity and communication with other devices.

Frame Rate: 30 fps

High frame rate allows for smooth and clear video recording.

Array Type: FRAME

Frame sensor array design provides efficient image capture and processing.

Mounting Feature: SURFACE MOUNT

Surface mount feature for easy and secure mounting on PCBs or other surfaces.

Technical Specifications

Image Sensors MT9V125IA7XTC-DR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.50-3.10 V

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.3 mm

Body Length/Diameter:

9 mm

Dynamic Range:

71.7 dB

Frame Rate:

30 fps

Horizontal Pixel:

640

JESD-609 Code:

e1

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

55 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

5.60X5.60

Sensors or Transducers Type:

Maximum Supply Voltage:

3.1 V

Minimum Supply Voltage:

2.5 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

480

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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