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AR0141CSSM21SUEA0-E

Onsemi

AR0141CSSM21SUEA0-E by Onsemi

The Onsemi AR0141CSSM21SUEA0-E is a CMOS image sensor with 1280x800 resolution, 3x3 um pixel size, and 50 MHz master clock. It operates b/w -30 to 70 °C with a dynamic range of 79 dB. Ideal for applications requiring high-quality digital imaging at a max supply voltage of 1.95 V.

Median Price

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Lifecycle Status

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Digiode

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Vyrian

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Native Components

USA . 479 parts In-Stock

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Northwest PG Solutions

USA . 2,138 parts In-Stock

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Problanco Electronics

Mexico . 7,503 parts In-Stock

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Kulean Microsystems

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TANS Electronics

Latvia . 1,485 parts In-Stock

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Corphita

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SupplyDigital Components

Austria . 954 parts In-Stock

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UHIMA Technologies

Türkiye . 307 parts In-Stock

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Corohmni

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Overview

Capture every moment in stunning clarity with the AR0141CSSM21SUEA0-E Image Sensor by Onsemi. This innovative sensor, designed with precision and quality in mind, offers unparalleled performance for a wide range of applications. From security cameras to automotive systems, this sensor delivers crisp images with exceptional detail. With Onsemi's reputation for excellence and reliability, you can trust that this sensor will exceed your expectations. Elevate your projects with the AR0141CSSM21SUEA0-E and experience the difference today!

Feature Benefit Bullets

Pixel Size: 3X3 um

Small pixel size allows for higher resolution and better image quality.

Maximum Supply Voltage: 1.95 V

Provides flexibility in power supply options and can work with a variety of systems.

Master Clock: 50 MHz

High master clock frequency allows for fast data processing and high-speed image capture.

Body Width: 9 inch

Compact body size makes it easy to integrate into different devices and systems.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

CMOS image sensor technology offers high image quality, low power consumption, and fast data readout.

Package Shape or Style: SQUARE

Square package shape provides easy mounting and alignment in electronic devices.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage helps in reducing power consumption and extends battery life.

Maximum Operating Temperature: 70 °C

Wide operating temperature range allows for use in various environments and conditions.

Horizontal Pixel: 1280

High horizontal pixel count results in detailed and sharp images.

Output Range: 0.40-2.50V

Wide output voltage range allows for compatibility with different systems and signal levels.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies interfacing with other digital circuits and systems.

Minimum Operating Temperature: -30 °C

Low minimum operating temperature ensures the sensor can function in cold environments.

Maximum Operating Current: 170 mA

Moderate maximum operating current ensures efficient power usage and helps prevent overheating.

Housing: PLASTIC

Plastic housing is lightweight, durable, and cost-effective.

Dynamic Range: 79 dB

High dynamic range allows for capturing a wide range of light intensities without losing detail.

Vertical Pixel: 800

Vertical pixel count contributes to the overall resolution and quality of images produced.

Body Length/Diameter: 9 mm

Compact body size allows for easy integration and placement within devices.

Optical Format (inch): 1/4

1/4 inch optical format is commonly used in compact cameras and provides good image quality.

Termination Type: SOLDER

Solder termination provides a reliable and secure connection for the sensor.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies the connection and communication with external devices.

Frame Rate: 60 fps

High frame rate allows for smooth and fluid motion capture in videos and fast-moving scenes.

Array Type: FRAME

Frame array type enables the sensor to capture images in a sequential manner for processing.

Mounting Feature: SURFACE MOUNT

Surface mount capability makes installation and integration of the sensor easier in electronic assemblies.

Technical Specifications

Image Sensors AR0141CSSM21SUEA0-E attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO HAVE ANALOG SUPPLY VOLTAGE 2.5-3.1V, ELECTRONIC ROLLING SHUTTER

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.4 mm

Body Length/Diameter:

9 mm

Dynamic Range:

79 dB

Frame Rate:

60 fps

Horizontal Pixel:

1280

Housing:

PLASTIC

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Current:

170 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3X3

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

800

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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