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AR0147ATSC00XUEA0-TPBR

Onsemi

AR0147ATSC00XUEA0-TPBR by Onsemi

Onsemi's AR0147ATSC00XUEA0-TPBR is a 3x3 um CMOS image sensor with 1344H x 968V pixels, offering a dynamic range of 140 dB. Operating at -40 to 110 °C, it has a max supply voltage of 1.26 V and uses a digital output interface. Ideal for applications requiring high-resolution imaging with low light sensitivity.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,857 parts In-Stock

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VNN

France . 1,780 parts In-Stock

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Nova Conductors

Japan . 700 parts In-Stock

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700

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Digiode

USA . 334 parts In-Stock

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Semicontronic

India . 1,019 parts In-Stock

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$3.750

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$3.656

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$3.638

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1,019

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Ampacity Inc.

Singapore . 697 parts In-Stock

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$3.750

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697

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AZTECH Wire

Italy . 719 parts In-Stock

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$13.132

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Problanco Electronics

Mexico . 4,424 parts In-Stock

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Continental Prestige Electronics

USA . 2,805 parts In-Stock

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SupplyDigital Components

Austria . 2,071 parts In-Stock

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Argo Parts USA

USA . 1,958 parts In-Stock

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Kulean Microsystems

USA . 1,086 parts In-Stock

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Corphita

USA . 840 parts In-Stock

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UHIMA Technologies

Türkiye . 483 parts In-Stock

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Corohmni

South Africa . 132 parts In-Stock

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Bastille Electronics

Australia . 100 parts In-Stock

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TANS Electronics

Latvia . 47 parts In-Stock

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Overview

Discover the unparalleled quality and innovation of Onsemi with the AR0147ATSC00XUEA0-TPBR Image Sensor. As a leader in the industry, Onsemi consistently delivers cutting-edge technology that exceeds expectations. This sensor is perfect for a wide range of applications, offering exceptional performance and reliability. With a dynamic range of 140 dB and a frame rate of 60 fps, this sensor provides unmatched clarity and precision. Experience the value and benefits of Onsemi's AR0147ATSC00XUEA0-TPBR Image Sensor and elevate your projects to new heights.

Feature Benefit Bullets

Pixel Size (um): 3X3

Small pixel size allows for high resolution images and detailed captures.

Maximum Supply Voltage: 1.26 V

Low power consumption helps in reducing energy costs and extends battery life.

Master Clock: 50 MHz

High clock speed ensures fast data processing and real-time image rendering.

Body Width: 9 inch

Compact size makes it easy to integrate into various devices and applications.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS technology offers low noise and high sensitivity for clear image quality.

Body Height: 1.55 mm

Slim profile makes it suitable for slim devices and space-constrained designs.

Package Shape or Style: SQUARE

Square package provides easy mounting and alignment in circuits and PCBs.

Minimum Supply Voltage: 1.14 V

Operating at a low voltage helps in reducing power consumption and heat generation.

Maximum Operating Temperature: 110 °C

Wide temperature range ensures reliability in extreme operating conditions.

Horizontal Pixel: 1344

High pixel count allows for sharp and detailed image capture and processing.

Output Type: DIGITAL VOLTAGE

Digital output simplifies data processing and transmission for efficient image capture.

Minimum Operating Temperature: -40 °C

Low temperature threshold ensures functionality in cold environments.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

Durable terminal finish ensures long-term reliability and connectivity.

Maximum Operating Current: 540 mA

High operating current allows for fast data transfer and processing.

Dynamic Range: 140 dB

Wide dynamic range captures both bright and dark areas in a scene for balanced images.

Vertical Pixel: 968

High vertical pixel count enables high-resolution images with clear details and depth.

Body Length/Diameter: 9 mm

Compact dimensions make it easy to fit into small devices and compact designs.

Optical Format (inch): 1/4

Common optical format ensures compatibility with various lenses and accessories.

Termination Type: SOLDER

Solder termination provides secure and reliable connections for long-term use.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies connectivity and integration with other components.

Frame Rate: 60 fps

High frame rate allows for smooth and real-time image capture and video recording.

Array Type: FRAME

Frame array structure enables efficient image processing and data capture.

Sensitivity (V/lx.s): 30.7 V/lx.s

High sensitivity allows for clear and detailed image capture even in low light conditions.

Mounting Feature: SURFACE MOUNT

Surface mount design offers easy installation and secure attachment for various applications.

Technical Specifications

Image Sensors AR0147ATSC00XUEA0-TPBR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.55 mm

Body Length/Diameter:

9 mm

Dynamic Range:

140 dB

Frame Rate:

60 fps

Horizontal Pixel:

1344

JESD-609 Code:

e1

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Current:

540 mA

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

3X3

Sensitivity (V/lx.s):

30.7 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.26 V

Minimum Supply Voltage:

1.14 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

968

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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