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NOIP3SE1300A-QDI

Onsemi

NOIP3SE1300A-QDI by Onsemi

NOIP3SE1300A-QDI by Onsemi is an Image Sensor with 4.80x4.80 um Pixel Size, 1.7-1.9 V Supply Voltage range, and 72 MHz Master Clock. Ideal for applications requiring high-speed image capture like surveillance systems or industrial cameras due to its 1280x1024 resolution and 210 fps Frame Rate.

Median Price

$68.470

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 18 parts In-Stock

1+ parts

$68.470

100+ parts

$67.110

1k+ parts

$65.740

10k+ parts

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18

$68.470

$67.110

$65.740

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,268 parts In-Stock

1+ parts

$65.046

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2,268

$65.046

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Vyrian

USA . 5,372 parts In-Stock

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5,372

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Distributors (Availability)

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AZTECH Wire

Italy . 360 parts In-Stock

1+ parts

$19.770

100+ parts

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360

$19.770

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Corphita

USA . 1,122 parts In-Stock

1+ parts

$61.623

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1,122

$61.623

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Corohmni

South Africa . 285 parts In-Stock

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$68.470

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285

$68.470

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Kulean Microsystems

USA . 4,428 parts In-Stock

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4,428

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SupplyDigital Components

Austria . 4,142 parts In-Stock

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UHIMA Technologies

Türkiye . 240 parts In-Stock

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240

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TANS Electronics

Latvia . 186 parts In-Stock

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Problanco Electronics

Mexico . 102 parts In-Stock

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Overview

Capture the world in stunning detail with the NOIP3SE1300A-QDI Image Sensor by Onsemi. Designed with precision and innovation, this sensor offers unparalleled image quality and clarity for a wide range of applications. From surveillance systems to medical imaging, this sensor delivers exceptional performance and reliability. Experience the value and benefits of cutting-edge technology with Onsemi's superior image sensors. Elevate your projects and exceed expectations with the NOIP3SE1300A-QDI.

Feature Benefit Bullets

Pixel Size (um): 4.80X4.80

Large pixel size helps in capturing more light, resulting in better image quality even in low light conditions.

Maximum Supply Voltage: 1.9 V

Allows for efficient power usage while providing enough voltage for optimal performance.

Master Clock: 72 MHz

High clock frequency ensures fast and efficient operation of the image sensor.

Body Width: 14.22 inch

Compact size makes it easy to integrate the image sensor into various devices without taking up much space.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensor technology is known for its low power consumption and high image quality, making it a reliable choice.

Body Height: 2.28 mm

Slim profile allows for flexible placement and integration of the image sensor in compact devices.

Package Shape or Style: SQUARE

Square shape provides a symmetrical design, which is beneficial for easier alignment and installation in devices.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage helps in conserving power and prolonging battery life in portable devices.

Maximum Operating Temperature: 85 °C

Wide operating temperature range makes the image sensor suitable for use in various environmental conditions.

Horizontal Pixel: 1280

High horizontal pixel count allows for detailed and high-resolution image capture.

Output Type: DIGITAL VOLTAGE

Digital output provides reliable and accurate data transfer for further processing and analysis.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures the image sensor can function even in extreme cold conditions.

Maximum Operating Current: 80 mA

Moderate operating current consumption helps in maintaining power efficiency of the device.

Dynamic Range: 60 dB

Wide dynamic range allows the image sensor to capture both bright and dark areas in a scene with detail.

Vertical Pixel: 1024

High vertical pixel count contributes to overall image sharpness and detail.

Body Length/Diameter: 14.22 mm

Compact body size makes it easy to integrate the image sensor into various devices.

Spectral Response (nm): 400-1000

Broad spectral response range allows the image sensor to capture a wide range of colors and wavelengths.

Optical Format (inch): 1/2

Standard optical format ensures compatibility with a wide range of lenses and accessories.

Data Rate: 72 Mbps

High data rate enables fast and efficient transfer of image data for real-time processing.

Termination Type: SOLDER

Solder termination provides secure and reliable connections for the image sensor.

Output Interface Type: 4-WIRE INTERFACE

4-wire interface allows for easy and efficient communication with other devices or systems.

Frame Rate: 210 fps

High frame rate ensures smooth and detailed motion capture in video recording applications.

Array Type: FULL FRAME

Full frame array design provides consistent image quality across the entire sensor surface.

Mounting Feature: SURFACE MOUNT

Surface mount capability simplifies the installation and assembly process of the image sensor in electronic devices.

Technical Specifications

Image Sensors NOIP3SE1300A-QDI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT 3.3V NOMINAL SUPPLY VOLTAGE; IT ALSO HAVE MASTER CLOCK 360 MHZ (10-BIT) AND 288 MHZ (8-BIT) WHEN PLL IS NOT USED

Array Type:

FULL FRAME

Body Width:

14.22 inch

Body Height:

2.28 mm

Body Length/Diameter:

14.22 mm

Data Rate:

72 Mbps

Dynamic Range:

60 dB

Frame Rate:

210 fps

Horizontal Pixel:

1280

Master Clock:

72 MHz

Mounting Feature:

Maximum Operating Current:

80 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/2

Output Interface Type:

4-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

4.80X4.80

Sensors or Transducers Type:

Spectral Response (nm):

400-1000

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

1024

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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