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ASX342ATSC00XPED0-DP

Onsemi

ASX342ATSC00XPED0-DP by Onsemi

ASX342ATSC00XPED0-DP by Onsemi is a 5.6x5.6um CMOS image sensor with 728H x 560V pixels, offering a dynamic range of 87dB and operating at temperatures from -40 to 105 °C. It features a digital voltage output interface with a data rate of 27Mbps, making it ideal for applications requiring high-resolution imaging in automotive cameras and surveillance systems.

Median Price

$12.340

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,000 parts In-Stock

1+ parts

$12.340

100+ parts

$9.604

1k+ parts

$8.963

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2,000

$12.340

$9.604

$8.963

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Distributors (In-Stock)

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Digiode

USA . 1,185 parts In-Stock

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$10.270

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$10.270

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Vyrian

USA . 642 parts In-Stock

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$10.810

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642

$10.810

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Distributors (Availability)

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Corphita

USA . 134 parts In-Stock

1+ parts

$9.729

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134

$9.729

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Corohmni

South Africa . 113 parts In-Stock

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$10.810

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113

$10.810

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Perfect Parts

USA . 8,635 parts In-Stock

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8,635

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TANS Electronics

Latvia . 8,082 parts In-Stock

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SupplyDigital Components

Austria . 6,543 parts In-Stock

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Problanco Electronics

Mexico . 6,152 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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GreenTree Electronics

Israel . 2,570 parts In-Stock

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Kulean Microsystems

USA . 2,171 parts In-Stock

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Native Components

USA . 665 parts In-Stock

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665

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Northwest PG Solutions

USA . 122 parts In-Stock

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UHIMA Technologies

Türkiye . 70 parts In-Stock

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Overview

Experience top-of-the-line image quality and performance with the ASX342ATSC00XPED0-DP by Onsemi. As a leading manufacturer in the industry, Onsemi delivers cutting-edge image sensors that redefine clarity and precision. Ideal for a wide range of applications, this sensor offers unparalleled value and benefits to customers seeking superior imaging solutions. Upgrade your tools with Onsemi's ASX342ATSC00XPED0-DP and unlock a world of possibilities in image sensing technology.

Feature Benefit Bullets

Pixel Size (um): 5.6X5.6

The small pixel size allows for high resolution images to be captured with fine details.

Maximum Supply Voltage: 1.95 V

The maximum supply voltage of 1.95 V ensures safe operation of the image sensor without risking damage.

Master Clock: 27 MHz

The high master clock frequency of 27 MHz ensures fast and efficient data processing.

Body Width: 7.5 inch

The compact body width of 7.5 inches allows for easy integration into various devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensors are known for their low power consumption and high sensitivity, making them ideal for a wide range of applications.

Minimum Supply Voltage: 1.7 V

The low minimum supply voltage of 1.7 V ensures efficient power usage and extends battery life in portable devices.

Maximum Operating Temperature: 105 °C

The wide operating temperature range of up to 105 °C allows for reliable performance in various environmental conditions.

Output Range: 0.84-1.96V

The output voltage range of 0.84-1.96V provides flexibility for signal processing and compatibility with other components.

Dynamic Range: 87 dB

The high dynamic range of 87 dB allows the image sensor to capture a wide range of light intensities, resulting in high-quality images with accurate color reproduction.

Frame Rate: 60 fps

The high frame rate of 60 fps enables smooth and fluid video recording without motion blur or lag.

Technical Specifications

Image Sensors ASX342ATSC00XPED0-DP attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO HAVE ANALOG VOLTAGE FROM 2.66 TO 2.94V, ELECTRONIC ROLLING SHUTTER

Array Type:

FRAME

Body Width:

7.5 inch

Body Height:

1.28 mm

Body Length/Diameter:

7.5 mm

Data Rate:

27 Mbps

Dynamic Range:

87 dB

Frame Rate:

60 fps

Horizontal Pixel:

728

Housing:

PLASTIC

JESD-609 Code:

e1

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

50 mA

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

5.6X5.6

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

TIN SILVER COPPER

Termination Type:

SOLDER

Vertical Pixel:

560

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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