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KAI-08051-ABA-JP-BA

Onsemi

KAI-08051-ABA-JP-BA by Onsemi

KAI-08051-ABA-JP-BA by Onsemi is an image sensor with 5.5x5.5 um pixel size, 3364 horizontal pixels, and 2520 vertical pixels. It operates b/w -50 to 70 °C and has a dynamic range of 66 dB. Ideal for applications requiring high-resolution imaging in industrial or scientific settings.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,456 parts In-Stock

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Digiode

USA . 1,111 parts In-Stock

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AZTECH Wire

Italy . 624 parts In-Stock

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$21.830

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624

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Problanco Electronics

Mexico . 3,666 parts In-Stock

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Kulean Microsystems

USA . 2,555 parts In-Stock

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SupplyDigital Components

Austria . 2,270 parts In-Stock

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Corphita

USA . 666 parts In-Stock

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Corohmni

South Africa . 275 parts In-Stock

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TANS Electronics

Latvia . 181 parts In-Stock

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UHIMA Technologies

Türkiye . 159 parts In-Stock

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Overview

Capture stunning images with the KAI-08051-ABA-JP-BA Image Sensor by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in their products. This image sensor is perfect for applications requiring high-resolution and exceptional image quality. With a wide range of features and specifications, this sensor offers unmatched value and benefits to customers looking to elevate their imaging capabilities. Trust Onsemi and experience the superior performance of the KAI-08051-ABA-JP-BA Image Sensor.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

The small pixel size allows for high resolution images to be captured with great detail.

Maximum Supply Voltage: 15.5 V

The high maximum supply voltage provides flexibility in power input options, making it suitable for various applications.

Body Width: 29 inch

The compact body width makes this image sensor suitable for use in small or space-constrained devices.

Power Supplies (V): 15

The consistent power supply voltage ensures stable operation of the image sensor, resulting in reliable performance.

Sensors or Transducers Type: IMAGE SENSOR,CCD

Being a CCD image sensor, it offers high-quality image capture capabilities and low noise levels.

Package Shape or Style: RECTANGULAR

The rectangular package shape allows for easy integration and mounting within devices.

Minimum Supply Voltage: 14.5 V

The low minimum supply voltage helps in energy efficiency and can extend the battery life of portable devices.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, this image sensor can withstand harsh environmental conditions without compromising its performance.

Horizontal Pixel: 3364

The high number of horizontal pixels offers superior image resolution and clarity.

Minimum Operating Temperature: -50 °C

The low minimum operating temperature ensures that the image sensor can function in extreme cold environments.

Dynamic Range: 66 dB

The wide dynamic range allows the image sensor to capture both bright and dark areas in an image accurately.

Vertical Pixel: 2520

The high number of vertical pixels contributes to the overall sharpness and detail of the captured images.

Body Length/Diameter: 40 mm

The compact body length/diameter makes this image sensor easy to incorporate into various device designs.

Optical Format (inch): 4/3

The 4/3 optical format provides a good balance between sensor size and image quality, making it suitable for a wide range of applications.

Termination Type: SOLDER

The solder termination type offers a reliable and durable connection for the image sensor in different operating conditions.

Array Type: INTERLINE

The interline array type provides fast readout speeds and high sensitivity, making it ideal for applications where quick image capture is essential.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature offers secure attachment of the image sensor to the device board, ensuring stability during operation.

Technical Specifications

Image Sensors KAI-08051-ABA-JP-BA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 39 MICRO VOLT PER ELECTRON

Array Type:

INTERLINE

Body Width:

29 inch

Body Length/Diameter:

40 mm

Dynamic Range:

66 dB

Horizontal Pixel:

3364

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

4/3

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Power Supplies (V):

15

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

2520

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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