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KAI-02150-CBA-JB-AE

Onsemi

KAI-02150-CBA-JB-AE by Onsemi

KAI-02150-CBA-JB-AE by Onsemi is a 2/3 inch CCD image sensor with 1920x1080 pixels. It operates b/w -50 °C to 70°C, with a dynamic range of 64 dB. Suitable for applications requiring high-resolution imaging in industrial and scientific fields.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,435 parts In-Stock

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Vyrian

USA . 230 parts In-Stock

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Kulean Microsystems

USA . 6,766 parts In-Stock

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SupplyDigital Components

Austria . 6,618 parts In-Stock

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Problanco Electronics

Mexico . 6,602 parts In-Stock

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TANS Electronics

Latvia . 3,724 parts In-Stock

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Corphita

USA . 1,563 parts In-Stock

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Corohmni

South Africa . 447 parts In-Stock

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UHIMA Technologies

Türkiye . 296 parts In-Stock

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Overview

Elevate your imaging experience with the KAI-02150-CBA-JB-AE by Onsemi. As a leading manufacturer in the industry, Onsemi delivers superior quality and reliability in their Image Sensors category. This versatile CCD sensor offers precision and clarity with its 1920 x 1080 pixel resolution and impressive dynamic range of 64 dB. Perfect for a wide range of applications, from security surveillance to medical imaging, this sensor provides unparalleled value and performance that will exceed your expectations. Choose Onsemi for cutting-edge technology that captures every detail with precision.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

High pixel density provides sharp and detailed images, making this image sensor ideal for high-resolution applications.

Maximum Supply Voltage: 15.5 V

Ability to handle high supply voltage ensures stable performance and reliable operation under varying power conditions.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors are known for their excellent image quality, making this image sensor a great choice for applications where image clarity is crucial.

Package Shape or Style: RECTANGULAR

Rectangular package design allows for easy integration and fitting into various devices or systems.

Minimum Supply Voltage: 14.5 V

Low minimum supply voltage requirement helps in reducing power consumption and extending the battery life of the device.

Maximum Operating Temperature: 70 °C

Wide operating temperature range enables the image sensor to function effectively in various environmental conditions.

Horizontal Pixel: 1920

High horizontal pixel count results in detailed and high-resolution images, making this sensor suitable for demanding imaging applications.

Minimum Operating Temperature: -50 °C

Ability to operate in extreme cold temperatures ensures the image sensor can be used in a wide range of environments.

Dynamic Range: 64 dB

Wide dynamic range allows the sensor to capture both bright and dark areas accurately, resulting in high-quality images with good contrast.

Vertical Pixel: 1080

High vertical pixel count contributes to the overall image sharpness and clarity, making this sensor suitable for applications requiring detailed images.

Optical Format (inch): 2/3

2/3 inch optical format is commonly used in professional cameras, ensuring compatibility with a wide range of lenses and accessories.

Termination Type: SOLDER

Solder termination provides a secure and reliable connection, ensuring proper functionality and longevity of the image sensor.

Array Type: INTERLINE

Interline array design helps in reducing image smear and distortion, resulting in clear and sharp images even during fast movements.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting offers a sturdy and stable attachment, making installation easy and ensuring the sensor remains securely in place.

Technical Specifications

Image Sensors KAI-02150-CBA-JB-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS OUTPUT SENSITIVITY OF 34 MICRO VOLT PER ELECTRON

Array Type:

INTERLINE

Dynamic Range:

64 dB

Horizontal Pixel:

1920

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

2/3

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

1080

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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