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MT9V131C12STCES

Onsemi

MT9V131C12STCES by Onsemi

Onsemi's MT9V131C12STCES image sensor features 5.6x5.6 um pixel size, 640x480 resolution, and 27 MHz master clock. Ideal for digital cameras, surveillance systems, and machine vision applications due to its high sensitivity of 1.9 V/lx.s and frame rate of 30 fps.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,435 parts In-Stock

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Digiode

USA . 1,717 parts In-Stock

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Problanco Electronics

Mexico . 7,535 parts In-Stock

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Kulean Microsystems

USA . 6,594 parts In-Stock

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SupplyDigital Components

Austria . 4,286 parts In-Stock

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TANS Electronics

Latvia . 2,607 parts In-Stock

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Corphita

USA . 972 parts In-Stock

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Corohmni

South Africa . 398 parts In-Stock

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UHIMA Technologies

Türkiye . 162 parts In-Stock

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Overview

Capture vivid and detailed images with the Onsemi MT9V131C12STCES Image Sensor. With a cutting-edge design and reliable manufacturing by Onsemi, this sensor offers unmatched quality and performance. Ideal for a wide range of applications, this sensor delivers exceptional value and benefits to customers looking for high-quality imaging solutions. Experience the advantages of crystal-clear images and innovative technology that the MT9V131C12STCES brings to your projects.

Feature Benefit Bullets

Pixel Size (um): 5.6X5.6

High resolution pixels ensure clear and detailed images.

Maximum Supply Voltage: 3.05 V

Allows for efficient power usage and safe operation.

Master Clock: 27 MHz

Provides high speed image processing capabilities.

Body Width: 11.43 inch

Compact size for easy integration into various devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

Uses CMOS technology for improved image quality and energy efficiency.

Body Height: 2.3 mm

Slim profile for versatile installation options.

Package Shape or Style: SQUARE

Common form factor that is easy to work with.

Minimum Supply Voltage: 2.55 V

Allows for flexibility in power input and potential energy savings.

Maximum Operating Temperature: 70 °C

Can withstand high temperatures for reliable performance in various environments.

Horizontal Pixel: 640

High number of pixels for enhanced image resolution and clarity.

Output Range: 0.20-2.60V

Provides a wide range of output options for different applications.

Output Type: DIGITAL VOLTAGE

Digital output for easy integration with digital systems.

Minimum Operating Temperature: -20 °C

Can operate in low temperature conditions without issue.

Maximum Operating Current: 25 mA

Efficient power consumption for longer usage periods.

Housing: CERAMIC

Durable and reliable housing material for protection and longevity.

Dynamic Range: 60 dB

Wide dynamic range for capturing detailed images in varying lighting conditions.

Vertical Pixel: 480

Adequate vertical resolution for clear images.

Body Length/Diameter: 11.43 mm

Compact design for space efficiency.

Optical Format (inch): 1/4

Common optical format for compatibility with various lenses and systems.

Termination Type: SOLDER

Secure and durable termination method for lasting connections.

Output Interface Type: 2-WIRE INTERFACE

Convenient interface for easy connectivity with other devices.

Frame Rate: 30 fps

High frame rate for smooth and fluid image capture.

Array Type: FRAME

Array design for capturing multiple image frames efficiently.

Sensitivity (V/lx.s): 1.9 V/lx.s

High sensitivity for capturing detailed images even in low light conditions.

Mounting Feature: SURFACE MOUNT

Easy surface mounting for quick and convenient installation.

Technical Specifications

Image Sensors MT9V131C12STCES attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER

Array Type:

FRAME

Body Width:

11.43 inch

Body Height:

2.3 mm

Body Length/Diameter:

11.43 mm

Dynamic Range:

60 dB

Frame Rate:

30 fps

Horizontal Pixel:

640

Housing:

CERAMIC

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

25 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-20 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

5.6X5.6

Sensitivity (V/lx.s):

1.9 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

3.05 V

Minimum Supply Voltage:

2.55 V

Termination Type:

SOLDER

Vertical Pixel:

480

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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