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KAI-50140-AXA-JD-B1

Onsemi

KAI-50140-AXA-JD-B1 by Onsemi

KAI-50140-AXA-JD-B1 by Onsemi is an image sensor with 4.5X4.5 um pixel size, 60 MHz master clock, and 10440 horizontal pixels. It operates b/w -50 to 60 °C and has a dynamic range of 60 dB. Ideal for applications requiring high-resolution imaging in various industries.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,913 parts In-Stock

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Digiode

USA . 1,148 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 425 parts In-Stock

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$13.470

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425

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Kulean Microsystems

USA . 6,710 parts In-Stock

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Problanco Electronics

Mexico . 5,761 parts In-Stock

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TANS Electronics

Latvia . 2,535 parts In-Stock

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SupplyDigital Components

Austria . 1,140 parts In-Stock

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Corphita

USA . 969 parts In-Stock

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Corohmni

South Africa . 494 parts In-Stock

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UHIMA Technologies

Türkiye . 143 parts In-Stock

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Overview

Enhance your imaging solutions with the KAI-50140-AXA-JD-B1 by Onsemi, a top-tier manufacturer known for its superior quality image sensors. Ideal for a wide range of applications, this CCD sensor offers exceptional performance and reliability. With a high dynamic range, precise pixel size, and digital output, this sensor delivers crisp, clear images every time. Experience the value and benefits of cutting-edge technology with the KAI-50140-AXA-JD-B1, setting a new standard for image sensors in the industry.

Feature Benefit Bullets

Pixel Size (um): 4.5X4.5

Smaller pixel size allows for higher resolution images to be captured with more detail.

Maximum Supply Voltage: 15.5 V

Allows for flexibility in power supply options and compatibility with different systems.

Master Clock: 60 MHz

High master clock frequency enables fast data readout and processing for real-time imaging applications.

Sensors or Transducers Type: IMAGE SENSOR, CCD

CCD sensors are known for their high-quality image capture and sensitivity, making this product suitable for demanding imaging tasks.

Package Shape or Style: RECTANGULAR

Rectangular shape allows for easy integration into various systems and designs.

Minimum Supply Voltage: 14.5 V

Lower minimum supply voltage ensures efficient power usage and reduces the risk of damage from voltage fluctuations.

Maximum Operating Temperature: 60 °C

Wide operating temperature range makes this product suitable for use in various environments and conditions.

Horizontal Pixel: 10440

High horizontal pixel count enables higher resolution and detailed images to be captured.

Output Type: DIGITAL OUTPUT

Digital output simplifies data processing and transmission, making it easier to integrate this sensor into digital systems.

Minimum Operating Temperature: -50 °C

Wide range of operating temperatures ensures reliability in extreme cold conditions.

Maximum Operating Current: 11 mA

Low operating current helps in reducing power consumption and heat generation, making it suitable for portable and battery-powered devices.

Housing: GLASS

Glass housing provides durability and protection to the sensor, ensuring long-term functionality.

Dynamic Range: 60 dB

High dynamic range enables the sensor to capture a wide range of light intensities, resulting in high-quality images with accurate color reproduction.

Vertical Pixel: 4800

High vertical pixel count allows for capturing images with greater detail and resolution.

Termination Type: SOLDER

Solder termination ensures secure connections and reliability in harsh environments.

Array Type: FRAME

Frame array type enables the sensor to capture full-frame images without missing any details.

Mounting Feature: THROUGH HOLE MOUNT

Through-hole mounting feature makes it easy to integrate the sensor into a PCB or other hardware, ensuring stability and reliability.

Technical Specifications

Image Sensors KAI-50140-AXA-JD-B1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

FRAME

Dynamic Range:

60 dB

Horizontal Pixel:

10440

Housing:

GLASS

Master Clock:

60 MHz

Mounting Feature:

Maximum Operating Current:

11 mA

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-50 Cel

Output Type:

Package Shape or Style:

Pixel Size (um):

4.5X4.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

4800

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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