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KAI-50140-FXA-JD-AE

Onsemi

KAI-50140-FXA-JD-AE by Onsemi

KAI-50140-FXA-JD-AE by Onsemi is an image sensor with 4.5x4.5 um pixel size, 60 MHz master clock, and 10440 horizontal pixels. It operates b/w -50 to 60 °C and has a dynamic range of 60 dB. Ideal for digital output applications in industries like surveillance, medical imaging, and machine vision.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,505 parts In-Stock

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Vyrian

USA . 308 parts In-Stock

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Problanco Electronics

Mexico . 6,082 parts In-Stock

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TANS Electronics

Latvia . 4,873 parts In-Stock

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Corphita

USA . 1,940 parts In-Stock

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SupplyDigital Components

Austria . 1,249 parts In-Stock

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Kulean Microsystems

USA . 1,127 parts In-Stock

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UHIMA Technologies

Türkiye . 779 parts In-Stock

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Corohmni

South Africa . 233 parts In-Stock

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Overview

Capture the essence of true innovation with the KAI-50140-FXA-JD-AE by Onsemi. As a leader in image sensor technology, Onsemi delivers top-notch quality and reliability in every product. The KAI-50140-FXA-JD-AE is perfect for a wide range of applications, from industrial automation to security systems. With its exceptional performance and advanced features, this image sensor provides customers with unparalleled value, benefits, and advantages. Elevate your projects to new heights with the KAI-50140-FXA-JD-AE by Onsemi.

Feature Benefit Bullets

Pixel Size (um): 4.5X4.5

Small pixel size allows for high resolution images to be captured with fine details.

Maximum Supply Voltage: 15.5 V

Higher supply voltage allows for better sensitivity and performance of the image sensor.

Master Clock: 60 MHz

Fast master clock speed enables quick data readout and processing, essential for real-time imaging applications.

Sensors or Transducers Type: IMAGE SENSOR, CCD

CCD sensors are known for their high quality imaging capabilities, making this product suitable for professional applications.

Package Shape or Style: RECTANGULAR

Rectangular package allows for easy integration into various devices or systems.

Minimum Supply Voltage: 14.5 V

Lower minimum supply voltage ensures efficient power consumption and extended battery life for portable devices.

Maximum Operating Temperature: 60 °C

Wide operating temperature range makes this image sensor suitable for use in various environments.

Horizontal Pixel: 10440

High horizontal pixel count provides detailed and sharp images, making it ideal for high-resolution applications.

Output Type: DIGITAL OUTPUT

Digital output simplifies data processing and transmission, ensuring compatibility with modern imaging systems.

Minimum Operating Temperature: -50 °C

Low minimum operating temperature allows for use in extreme cold conditions without affecting performance.

Maximum Operating Current: 11 mA

Low operating current ensures energy efficiency and prolonged use without draining power sources quickly.

Housing: GLASS

Glass housing provides durability and protection to the image sensor, ensuring long-term reliability.

Dynamic Range: 60 dB

High dynamic range enables the sensor to capture a wide range of light intensities, resulting in detailed and accurate images.

Vertical Pixel: 4800

Vertical pixel count contributes to the overall resolution of the image sensor, enhancing its imaging capabilities.

Termination Type: SOLDER

Solder termination ensures secure connections and reliable performance of the image sensor in various applications.

Array Type: FRAME

Frame array type allows for capturing multiple frames or images consecutively, essential for motion capture and video recording.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature simplifies installation and maintenance of the image sensor in electronic devices or systems.

Technical Specifications

Image Sensors KAI-50140-FXA-JD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

FRAME

Dynamic Range:

60 dB

Horizontal Pixel:

10440

Housing:

GLASS

Master Clock:

60 MHz

Mounting Feature:

Maximum Operating Current:

11 mA

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-50 Cel

Output Type:

Package Shape or Style:

Pixel Size (um):

4.5X4.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

4800

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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