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KAI-50140-FXA-JD-B2

Onsemi

KAI-50140-FXA-JD-B2 by Onsemi

KAI-50140-FXA-JD-B2 by Onsemi is an image sensor with 4.5um pixel size, 60MHz master clock, and 10440 horizontal pixels. Ideal for digital output applications in CCD sensors, it operates b/w -50 to 60 °C with a supply voltage range of 14.5V to 15.5V.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,196 parts In-Stock

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Vyrian

USA . 56 parts In-Stock

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Kulean Microsystems

USA . 8,311 parts In-Stock

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SupplyDigital Components

Austria . 7,064 parts In-Stock

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Problanco Electronics

Mexico . 5,905 parts In-Stock

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TANS Electronics

Latvia . 2,533 parts In-Stock

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Corphita

USA . 1,532 parts In-Stock

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UHIMA Technologies

Türkiye . 339 parts In-Stock

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Corohmni

South Africa . 260 parts In-Stock

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Overview

Capture every moment with crystal clarity using the KAI-50140-FXA-JD-B2 image sensor by Onsemi. Renowned for their top-tier quality and cutting-edge technology, Onsemi delivers unmatched precision and performance in the field of image sensors. Ideal for a variety of applications, this sensor ensures vivid, high-resolution images with an impressive dynamic range. Experience the value of superior imaging capabilities and unlock endless possibilities with the KAI-50140-FXA-JD-B2.

Feature Benefit Bullets

Pixel Size (um) 4.5X4.5

Smaller pixel size allows for higher resolution images to be captured, making this image sensor ideal for applications requiring detailed image quality.

Maximum Supply Voltage 15.5 V

Higher maximum supply voltage provides flexibility and compatibility with a wide range of power sources, ensuring stable and reliable operation.

Master Clock 60 MHz

High master clock frequency enables fast data readout and processing, making this image sensor suitable for applications requiring real-time image capture and analysis.

Sensors or Transducers Type IMAGE SENSOR, CCD

CCD sensors are known for their high image quality, making this image sensor a great choice for applications where image fidelity is crucial.

Package Shape or Style RECTANGULAR

Rectangular package shape allows for easy integration and alignment in various devices and systems, enhancing the overall usability of this image sensor.

Minimum Supply Voltage 14.5 V

Lower minimum supply voltage ensures efficient power consumption and compatibility with a wide range of power sources, making this image sensor energy-efficient.

Maximum Operating Temperature 60 °C

High maximum operating temperature ensures reliable performance even in harsh environmental conditions, making this image sensor suitable for outdoor and industrial applications.

Horizontal Pixel 10440

High horizontal pixel count allows for wide image capture and detailed imaging, making this image sensor ideal for applications requiring panoramic views or high-resolution images.

Output Type DIGITAL OUTPUT

Digital output simplifies data processing and transmission, making this image sensor easy to interface with other digital devices and systems.

Minimum Operating Temperature -50 °C

Low minimum operating temperature ensures reliable performance even in extreme cold conditions, making this image sensor suitable for a wide range of applications in various environments.

Maximum Operating Current 11 mA

Low maximum operating current ensures energy efficiency and minimal power consumption, making this image sensor suitable for battery-powered or portable devices.

Housing GLASS

Glass housing provides durability and protection to the sensitive components inside, ensuring long-term reliability and performance of this image sensor.

Dynamic Range 60 dB

High dynamic range allows for accurate capture of both bright and dark areas in an image, making this image sensor suitable for applications requiring a wide range of light levels.

Vertical Pixel 4800

High vertical pixel count allows for detailed image capture in the vertical direction, making this image sensor suitable for applications requiring tall or vertically-oriented images.

Termination Type SOLDER

Solder termination ensures secure and reliable connections, making this image sensor durable and resistant to vibrations or mechanical stress.

Array Type FRAME

Frame array type simplifies image processing and analysis, making this image sensor easy to integrate into existing imaging systems or devices.

Mounting Feature THROUGH HOLE MOUNT

Through hole mounting feature enables easy and secure installation in a wide range of devices and systems, making this image sensor versatile and adaptable to various applications.

Technical Specifications

Image Sensors KAI-50140-FXA-JD-B2 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

FRAME

Dynamic Range:

60 dB

Horizontal Pixel:

10440

Housing:

GLASS

Master Clock:

60 MHz

Mounting Feature:

Maximum Operating Current:

11 mA

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-50 Cel

Output Type:

Package Shape or Style:

Pixel Size (um):

4.5X4.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

4800

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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