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KAI-4021-CBA-CD-BA

Onsemi

KAI-4021-CBA-CD-BA by Onsemi

KAI-4021-CBA-CD-BA by Onsemi is a 2048x2048 CCD image sensor with 7.4um pixel size and 60dB dynamic range. It operates b/w -50 °C to 70°C, making it suitable for industrial imaging applications requiring high-resolution and low-light performance. The sensor comes in a rectangular ceramic housing with through-hole mounting, offering a data rate of 40 Mbps.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 975 parts In-Stock

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Digiode

USA . 83 parts In-Stock

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TANS Electronics

Latvia . 5,178 parts In-Stock

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Kulean Microsystems

USA . 4,914 parts In-Stock

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Problanco Electronics

Mexico . 4,027 parts In-Stock

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Corphita

USA . 2,430 parts In-Stock

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SupplyDigital Components

Austria . 2,148 parts In-Stock

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UHIMA Technologies

Türkiye . 272 parts In-Stock

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Corohmni

South Africa . 243 parts In-Stock

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Overview

Unleash the power of high-quality imaging with the KAI-4021-CBA-CD-BA by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch performance and reliability in their image sensors. Perfect for a wide range of applications, this CCD sensor offers exceptional value with its superior image quality, dynamic range, and data rate. Experience the benefits of crystal-clear imaging and precise detail with the KAI-4021-CBA-CD-BA, setting new standards in image sensor technology.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

The small pixel size allows for detailed and high-resolution image capture, making this product suitable for applications requiring precision.

Body Width: 25.4 inch

The compact body width makes the sensor easy to integrate into different devices or systems without taking up too much space.

Sensors or Transducers Type: IMAGE SENSOR,CCD

The use of CCD sensors ensures high-quality and low-noise image capture, making this product ideal for applications requiring accurate image detection.

Package Shape or Style: RECTANGULAR

The rectangular shape makes it easier to mount the sensor in various orientations, increasing flexibility in design and installation.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature allows the sensor to function reliably in demanding environments without the risk of overheating.

Horizontal Pixel: 2048

The high horizontal pixel count results in sharp and detailed images, making this sensor suitable for applications requiring high-resolution image capture.

Minimum Operating Temperature: -50 °C

The low minimum operating temperature ensures that the sensor can still function effectively in cold conditions, increasing its versatility in various environments.

Dynamic Range: 60 dB

The wide dynamic range allows the sensor to capture both bright and dark areas in a scene accurately, resulting in high-quality images with excellent contrast.

Vertical Pixel: 2048

With a high vertical pixel count, this sensor can capture detailed images with good clarity and resolution, making it suitable for applications requiring precise image detection.

Data Rate: 40 Mbps

The high data rate enables fast and efficient data transfer, ensuring real-time image processing and transmission for applications that require quick response times.

Termination Type: SOLDER

The solder termination provides a reliable and secure connection, ensuring stable performance of the sensor during operation and preventing connection issues.

Array Type: INTERLINE

The interline array type allows for faster readout speeds and reduced image lag, making this sensor suitable for applications that require rapid image capture.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature makes it easy to securely attach the sensor to a PCB or mounting board, ensuring stability during operation and ease of installation.

Technical Specifications

Image Sensors KAI-4021-CBA-CD-BA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 31 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

25.4 inch

Body Height:

4.95 mm

Body Length/Diameter:

35.56 mm

Data Rate:

40 Mbps

Dynamic Range:

60 dB

Horizontal Pixel:

2048

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Termination Type:

SOLDER

Vertical Pixel:

2048

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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