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KAI-4011-CBA-CD-AE

Onsemi

KAI-4011-CBA-CD-AE by Onsemi

KAI-4011-CBA-CD-AE by Onsemi is a 2048x2048 CCD image sensor with 7.4um pixel size, offering a dynamic range of 60dB. It operates b/w -50 °C to 70°C and has a data rate of 40Mbps. Ideal for applications requiring high-resolution imaging in industrial or scientific settings.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,132 parts In-Stock

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Vyrian

USA . 314 parts In-Stock

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SupplyDigital Components

Austria . 7,691 parts In-Stock

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Problanco Electronics

Mexico . 5,109 parts In-Stock

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TANS Electronics

Latvia . 3,831 parts In-Stock

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Kulean Microsystems

USA . 3,355 parts In-Stock

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Corphita

USA . 671 parts In-Stock

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UHIMA Technologies

Türkiye . 414 parts In-Stock

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Corohmni

South Africa . 212 parts In-Stock

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Overview

Unlock the power of cutting-edge imaging technology with the KAI-4011-CBA-CD-AE by Onsemi. As a leading manufacturer in image sensors, Onsemi delivers top-quality products that guarantee superior performance and reliability. Ideal for a wide range of applications, this CCD image sensor offers unparalleled value and benefits to customers looking to enhance their imaging capabilities. From industrial automation to medical imaging, trust Onsemi to provide you with the tools you need to take your imaging projects to the next level.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

This small pixel size allows for high resolution images to be captured with detail and clarity.

Body Width: 25.4 inch

The compact size of the body makes it suitable for integration into various electronics and devices.

Sensors or Transducers Type: IMAGE SENSOR, CCD

CCD image sensors are known for their high-quality image output, making this sensor a reliable choice for imaging applications.

Body Height: 4.95 mm

The low profile height of the sensor allows for easy installation in tight spaces.

Package Shape or Style: RECTANGULAR

The rectangular shape of the package provides a standard form factor for easy integration into designs.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, this sensor can withstand tough environmental conditions.

Horizontal Pixel: 2048

The high number of horizontal pixels allows for detailed and sharp images to be captured.

Minimum Operating Temperature: -50 °C

The low minimum operating temperature ensures reliable operation even in extremely cold environments.

Housing: CERAMIC

The ceramic housing provides durability and protection to the sensitive components inside.

Dynamic Range: 60 dB

The high dynamic range allows for the sensor to capture a wide range of brightness levels in a scene.

Vertical Pixel: 2048

The vertical pixel count matches the horizontal count, providing a balanced and symmetrical image output.

Body Length/Diameter: 35.56 mm

The length/diameter ratio of the body ensures a compact yet functional design for easy integration.

Data Rate: 40 Mbps

The high data rate enables fast and efficient transfer of image data for real-time applications.

Termination Type: SOLDER

Solder termination provides a secure and reliable connection for long-term use.

Array Type: INTERLINE

Interline array type offers fast readout speeds and reduced image lag for improved performance.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature ensures a stable and secure attachment to the device or PCB.

Technical Specifications

Image Sensors KAI-4011-CBA-CD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 16 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

25.4 inch

Body Height:

4.95 mm

Body Length/Diameter:

35.56 mm

Data Rate:

40 Mbps

Dynamic Range:

60 dB

Horizontal Pixel:

2048

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Termination Type:

SOLDER

Vertical Pixel:

2048

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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