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MT9V135C12STC

Micron Technology

MT9V135C12STC by Micron Technology

Micron Technology's MT9V135C12STC image sensor features 640x480 resolution, 5.6um pixel size, and operates at -30 to 70°C. Ideal for applications requiring surface mounting, it runs on a 2.8V power supply.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 5,576 parts In-Stock

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Vyrian

USA . 1,635 parts In-Stock

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Digiode

USA . 1,012 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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Aztec Data Supply Inc.

USA . 300 parts In-Stock

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$2.033

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300

$2.033

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Ampacity Inc.

Singapore . 456 parts In-Stock

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$37.750

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456

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Continental Prestige Electronics

USA . 3,936 parts In-Stock

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Argo Parts USA

USA . 3,173 parts In-Stock

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Corphita

USA . 2,359 parts In-Stock

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Robosynatics

Brazil . 1,029 parts In-Stock

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Lucentia Tech

USA . 1,029 parts In-Stock

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$2.231

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$2.186

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$2.186

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$2.186

Kepictronics

USA . 141 parts In-Stock

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Aranea Global

USA . 50 parts In-Stock

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Overview

Capture the beauty of every moment with the MT9V135C12STC image sensor by Micron Technology. Known for their top-notch quality and innovation, Micron Technology has crafted this sensor to deliver outstanding performance in a variety of applications. From capturing stunning images to enabling advanced vision systems, this sensor offers unparalleled value and benefits to customers. Experience the advantages of precision imaging and cutting-edge technology with the MT9V135C12STC.

Feature Benefit Bullets

Pixel Size (um): 5.6X5.6

Larger pixel size provides higher light sensitivity and improved image quality, making it ideal for low-light applications.

Power Supplies (V): 2.8

Low power supply requirement helps in reducing overall power consumption and increasing efficiency.

Maximum Operating Temperature: 70 °C

High maximum operating temperature allows for reliable performance even in harsh environmental conditions.

Horizontal Pixel: 640

Higher horizontal pixel count provides detailed images with better resolution.

Minimum Operating Temperature: -30 °C

Wide range of operating temperatures ensures versatility and durability in various environments.

Vertical Pixel: 480

Good vertical pixel count ensures balanced image quality and aspect ratio.

Mounting Feature: SURFACE MOUNT

Surface mount design makes it easy to integrate into compact devices and provides flexibility in installation.

Technical Specifications

Image Sensors MT9V135C12STC attributes and parameters. Explore more Image Sensors devices from Micron Technology

Specs

Horizontal Pixel:

640

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Pixel Size (um):

5.6X5.6

Power Supplies (V):

2.8

Sub-Category:

CCD Image Sensors

Vertical Pixel:

480

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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