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KAI-43140-FXA-JD-AE

Onsemi

KAI-43140-FXA-JD-AE by Onsemi

KAI-43140-FXA-JD-AE by Onsemi is an image sensor with 4.5x4.5 um pixel size, 8040 horizontal pixels, and 5360 vertical pixels. It operates b/w -50 to 70 °C with a dynamic range of 60 dB. Ideal for applications requiring high-resolution imaging in industrial or scientific settings.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,399 parts In-Stock

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Digiode

USA . 1,470 parts In-Stock

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1,470

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Distributors (Availability)

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Problanco Electronics

Mexico . 5,267 parts In-Stock

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TANS Electronics

Latvia . 2,943 parts In-Stock

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SupplyDigital Components

Austria . 2,494 parts In-Stock

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Corphita

USA . 1,442 parts In-Stock

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Kulean Microsystems

USA . 671 parts In-Stock

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671

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Corohmni

South Africa . 129 parts In-Stock

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UHIMA Technologies

Türkiye . 59 parts In-Stock

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Overview

Experience the next level of imaging excellence with the KAI-43140-FXA-JD-AE by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-tier quality and innovative solutions for image sensors. This cutting-edge product boasts exceptional pixel size, maximum supply voltage, and dynamic range, making it ideal for a wide range of applications. Unlock unparalleled performance and reliability with the KAI-43140-FXA-JD-AE, offering customers unmatched value, benefits, and advantages in the world of image sensors. Elevate your imaging experience today with Onsemi's latest innovation.

Feature Benefit Bullets

Pixel Size (um): 4.5X4.5

This small pixel size allows for high resolution images to be captured with clear detail.

Maximum Supply Voltage: 15.5 V

The high maximum supply voltage ensures stable and reliable operation of the image sensor.

Body Width: 45.34 inch

The compact body width makes it suitable for integration into various devices and equipment.

Sensors or Transducers Type: IMAGE SENSOR, CCD

This type of sensor provides high-quality image capture and accurate color reproduction.

Minimum Supply Voltage: 14.5 V

The low minimum supply voltage helps to conserve power and extend battery life in portable devices.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature ensures reliable performance even in harsh environmental conditions.

Dynamic Range: 60 dB

The wide dynamic range allows for capturing both bright and dark areas in an image with detail.

Optical Format (inch): 1.7

The optical format corresponds to the size of the image sensor and determines the field of view and image capture capabilities.

Data Rate: 60 Mbps

The high data rate allows for fast transfer of image data, which is essential for real-time image processing.

Array Type: INTERLINE

The interline array type offers high sensitivity and low noise levels, making it ideal for low-light imaging applications.

Technical Specifications

Image Sensors KAI-43140-FXA-JD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT AS OUTPUT SENSITIVITY OF 42 MICRO VOLT PER ELECTRON

Array Type:

INTERLINE

Body Width:

45.34 inch

Body Height:

3.61 mm

Body Length/Diameter:

47.24 mm

Data Rate:

60 Mbps

Dynamic Range:

60 dB

Horizontal Pixel:

8040

Mounting Feature:

Maximum Operating Current:

11 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

1.7

Package Shape or Style:

Pixel Size (um):

4.5X4.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

5360

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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