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KAI-29050-PXA-JD-B1

Onsemi

KAI-29050-PXA-JD-B1 by Onsemi

Onsemi's KAI-29050-PXA-JD-B1 is a 5.5X5.5 um CCD image sensor with 6576Hx4384V pixels, offering a dynamic range of 64 dB. Operating b/w -50 to 70 °C, it requires a 15V power supply and has an optical format of 4/2.99 inch. Ideal for applications requiring high-resolution imaging in varying temperatures.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

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Digiode

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SupplyDigital Components

Austria . 5,386 parts In-Stock

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TANS Electronics

Latvia . 1,871 parts In-Stock

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Problanco Electronics

Mexico . 1,477 parts In-Stock

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Corphita

USA . 1,009 parts In-Stock

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Kulean Microsystems

USA . 527 parts In-Stock

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Corohmni

South Africa . 293 parts In-Stock

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UHIMA Technologies

Türkiye . 59 parts In-Stock

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Overview

Unlock a world of stunning image capture with the KAI-29050-PXA-JD-B1 by Onsemi. Known for their superior quality and reliability, Onsemi's image sensors are trusted by professionals worldwide. Ideal for a wide range of applications, this CCD image sensor offers unparalleled performance and precision. With a pixel size of 5.5X5.5 um and a dynamic range of 64 dB, this sensor delivers crystal-clear images in any environment. Experience the value and benefits of Onsemi's cutting-edge technology with the KAI-29050-PXA-JD-B1.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

The small pixel size allows for high resolution images with fine details, making this product suitable for applications requiring high-quality image capture.

Power Supplies (V): 15

The low power supply requirement of 15V makes this sensor energy-efficient and suitable for use in devices where power consumption is a concern.

Sensors or Transducers Type: IMAGE SENSOR,CCD

Being a CCD image sensor, this product offers high sensitivity and low noise, making it ideal for applications where image quality is paramount.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature of 70 °C, this sensor can withstand a range of environmental conditions, increasing its versatility.

Minimum Operating Temperature: -50 °C

The wide range of operating temperatures (-50 to 70 °C) makes this sensor suitable for use in both extreme cold and hot environments.

Dynamic Range: 64 dB

The high dynamic range of 64 dB allows the sensor to capture a wide range of light intensities accurately, resulting in clear and detailed images.

Vertical Pixel: 4384

The high number of vertical pixels allows for detailed and sharp vertical image resolution, making this sensor ideal for capturing high-quality images.

Optical Format (inch): 4/2.99

With an optical format of 4/2.99 inches, this sensor is compatible with a wide range of optical systems, increasing its flexibility and usability.

Array Type: INTERLINE

The interline array type reduces blooming and allows for faster readout speeds, making this sensor suitable for applications requiring quick image capture.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature provides a secure and stable mounting option for the sensor, ensuring proper alignment and functionality in various applications.

Technical Specifications

Image Sensors KAI-29050-PXA-JD-B1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 34 MICRO VOLT PER ELECTRON

Array Type:

INTERLINE

Dynamic Range:

64 dB

Horizontal Pixel:

6576

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

4/2.99

Pixel Size (um):

5.5X5.5

Power Supplies (V):

15

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Vertical Pixel:

4384

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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