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KAI-2001-CBA-CD-AE

Onsemi

KAI-2001-CBA-CD-AE by Onsemi

The Onsemi KAI-2001-CBA-CD-AE is a 7.4x7.4 um CCD image sensor with 1600H x 1200V pixels, offering a dynamic range of 60 dB. It operates at supply voltages b/w 14.5V to 15.5V and has a data rate of 40 Mbps. Ideal for applications requiring high-resolution imaging in industrial or scientific settings due to its superior pixel size and output type.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,596 parts In-Stock

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Digiode

USA . 1,397 parts In-Stock

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SupplyDigital Components

Austria . 8,226 parts In-Stock

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TANS Electronics

Latvia . 4,947 parts In-Stock

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Kulean Microsystems

USA . 3,571 parts In-Stock

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Problanco Electronics

Mexico . 1,429 parts In-Stock

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UHIMA Technologies

Türkiye . 678 parts In-Stock

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Corphita

USA . 468 parts In-Stock

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Corohmni

South Africa . 393 parts In-Stock

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Overview

Unlock the power of high-quality imaging with the KAI-2001-CBA-CD-AE by Onsemi. As a leading manufacturer in the industry, Onsemi delivers cutting-edge image sensors that provide unparalleled performance and reliability. Ideal for a wide range of applications, this CCD image sensor offers exceptional value, delivering crisp and clear images with a dynamic range of 60 dB. Experience the benefits of superior image quality and precision with the KAI-2001-CBA-CD-AE. Elevate your imaging capabilities today.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

This sensor has a small pixel size which allows for high resolution images to be captured.

Maximum Supply Voltage: 15.5 V

With a high maximum supply voltage, this sensor can handle a wide range of power inputs.

Body Width: 20.32 inch

The large body width provides stability and durability to the sensor.

Sensors or Transducers Type: IMAGE SENSOR, CCD

CCD image sensors are known for their high-quality image capture capabilities.

Body Height: 3.56 mm

The low body height allows for compact and slim device designs.

Package Shape or Style: RECTANGULAR

The rectangular shape makes it easy to integrate this sensor into different systems.

Minimum Supply Voltage: 14.5 V

Even with a low minimum supply voltage, this sensor can still operate effectively.

Horizontal Pixel: 1600

With a high number of horizontal pixels, this sensor can capture detailed and sharp images.

Output Type: ANALOG VOLTAGE

Analog voltage output is compatible with a wide range of systems and interfaces.

Dynamic Range: 60 dB

The wide dynamic range ensures accurate and vibrant color reproduction in captured images.

Vertical Pixel: 1200

The high number of vertical pixels allows for capturing detailed images in both horizontal and vertical directions.

Body Length/Diameter: 33.02 mm

The moderate body length/diameter provides a good balance between compactness and functionality.

Data Rate: 40 Mbps

With a high data rate, this sensor can quickly transfer image data for real-time processing.

Termination Type: SOLDER

Solder termination ensures a secure and reliable connection in various applications.

Array Type: INTERLINE

Interline array type allows for faster readout speeds and reduced image lag.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting provides a sturdy and permanent attachment for the sensor in a circuit board or device.

Technical Specifications

Image Sensors KAI-2001-CBA-CD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

SENSITIVITY IS 14 UV/ELECTRON, ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

20.32 inch

Body Height:

3.56 mm

Body Length/Diameter:

33.02 mm

Data Rate:

40 Mbps

Dynamic Range:

60 dB

Horizontal Pixel:

1600

Mounting Feature:

Output Type:

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

1200

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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