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KAI-02170-QBA-JD-AE

Onsemi

KAI-02170-QBA-JD-AE by Onsemi

KAI-02170-QBA-JD-AE by Onsemi is an image sensor with 1920x1080 pixels, 7.4um pixel size, and 70.2dB dynamic range. It operates b/w -50 to 70 °C and has a supply voltage range of 14.5V to 15.5V. Ideal for applications requiring high-resolution imaging in various environmental conditions.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,489 parts In-Stock

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2,489

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Vyrian

USA . 1,513 parts In-Stock

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1,513

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Kulean Microsystems

USA . 6,736 parts In-Stock

1+ parts

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6,736

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Problanco Electronics

Mexico . 3,392 parts In-Stock

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3,392

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SupplyDigital Components

Austria . 2,360 parts In-Stock

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2,360

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Corohmni

South Africa . 446 parts In-Stock

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446

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Corphita

USA . 349 parts In-Stock

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349

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TANS Electronics

Latvia . 336 parts In-Stock

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336

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UHIMA Technologies

Türkiye . 289 parts In-Stock

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289

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Overview

Discover the cutting-edge technology of the KAI-02170-QBA-JD-AE by Onsemi, a superior image sensor that sets new standards in quality and performance. Manufactured by the renowned Onsemi, this sensor offers unmatched precision and reliability, making it ideal for a wide range of applications in imaging technology. With its impressive features and advanced design, this product provides customers with exceptional value, delivering clear and detailed images for outstanding results. Experience the difference with the KAI-02170-QBA-JD-AE and elevate your projects to new heights of excellence.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

The small pixel size allows for high resolution images to be captured with fine details.

Maximum Supply Voltage: 15.5 V

The high maximum supply voltage ensures reliable and stable performance even under varying voltage conditions.

Body Width: 20.07 inch

The compact body width makes it easy to integrate the sensor into different camera designs.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD type image sensors are known for their high-quality image capture capabilities, making this product a desirable choice for imaging applications.

Package Shape or Style: RECTANGULAR

The rectangular package shape allows for easy mounting and integration into camera systems.

Minimum Supply Voltage: 14.5 V

The low minimum supply voltage ensures power efficiency and minimizes power consumption during operation.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature range allows the sensor to be used in various environments without the risk of overheating.

Horizontal Pixel: 1920

With a high horizontal pixel count, this sensor is capable of capturing detailed and high-resolution images.

Minimum Operating Temperature: -50 °C

The wide minimum operating temperature range enables the sensor to be used in extreme cold conditions without any performance issues.

Dynamic Range: 70.2 dB

The high dynamic range ensures that the sensor can capture a wide range of light intensities, leading to accurate and vibrant images.

Vertical Pixel: 1080

The high vertical pixel count allows for images with excellent clarity and sharpness.

Body Length/Diameter: 33.02 mm

The compact body length/diameter makes the sensor suitable for use in small and space-constrained camera designs.

Termination Type: SOLDER

The solder termination type provides a secure and reliable connection for the sensor, ensuring long-lasting performance.

Array Type: INTERLINE

Interline array type offers fast readout speeds, making the sensor ideal for applications that require quick image capture.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature simplifies the installation process and ensures a stable and secure mounting of the sensor.

Technical Specifications

Image Sensors KAI-02170-QBA-JD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS SENSITIVITY OF 8.7 MICRO VOLT PER ELECTRON LOW AND 33 MICRO VOLT PER ELECTRON HIGH; ELECTRONIC SHUTTER; DYNAMIC RANGE, EXTENDED LINEAR OF 82.5

Array Type:

INTERLINE

Body Width:

20.07 inch

Body Length/Diameter:

33.02 mm

Dynamic Range:

70.2 dB

Horizontal Pixel:

1920

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

1

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

1080

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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